2010
DOI: 10.1063/1.3458696
|View full text |Cite
|
Sign up to set email alerts
|

Heating dynamics and extreme ultraviolet radiation emission of laser-produced Sn plasmas

Abstract: The impact of 1.064 μm laser absorption depth on the heating and in-band (2% bandwidth) 13.5 nm extreme ultraviolet emissions in Sn plasmas is investigated experimentally and numerically. In-band emission lasting longer than the laser pulse and separation between the laser absorption and in-band emission region are observed. Maximum efficiency is achieved by additional heating of the core of the plasma to allow the optimal temperature to expand to a lower and more optically thin density. This leads to higher t… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
15
0

Year Published

2011
2011
2015
2015

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 10 publications
(15 citation statements)
references
References 12 publications
0
15
0
Order By: Relevance
“…1 EUV radiation from a laser produced tin plasma has been studied extensively in recent years for its potential application as a light source for semiconductor lithography. [2][3][4][5][6][7][8][9] A highbrightness and debris free source emitting at 13.5 nm radiation with 2% full bandwidth (in-band) is necessary for this purpose. The selection of EUV source at 13.5 nm is due to the availability of Si-Mo multilayer (ML) mirrors which reflect $70% of radiation at normal incidence with a bandwidth of 2% centered at 13.5 nm.…”
Section: Introductionmentioning
confidence: 99%
“…1 EUV radiation from a laser produced tin plasma has been studied extensively in recent years for its potential application as a light source for semiconductor lithography. [2][3][4][5][6][7][8][9] A highbrightness and debris free source emitting at 13.5 nm radiation with 2% full bandwidth (in-band) is necessary for this purpose. The selection of EUV source at 13.5 nm is due to the availability of Si-Mo multilayer (ML) mirrors which reflect $70% of radiation at normal incidence with a bandwidth of 2% centered at 13.5 nm.…”
Section: Introductionmentioning
confidence: 99%
“…10 The CE for the latter case with an irradiance of 5 Â 10 10 W/cm 2 was 2.5%, which is approximately double the CE calculated for the base case at 2 Â 10 11 W/cm 2 . The increase in CE for the lower irradiance is due to the reduction in overheating of the plasma on the one hand, 12 and to the lower absorption of EUV around the EDR on the other hand.…”
mentioning
confidence: 97%
“…The quasi-neutral core is not located in the center of the density distribution, as the absorption region that mainly produces the escaping electrons is shifted towards the laser. 19 The escaping electrons form the expansion front, and are followed by a region with an excess of ions. This binary structure can be periodically repeated in space; 31 in the schematic from Fig.…”
Section: Model Descriptionmentioning
confidence: 99%
“…16,17 LPPs from droplet targets were studied experimentally mainly in the firsts nanoseconds, during EUV emission. The ion load was measured at close distances from the droplet target with similar irradiance, droplet diameter, and spot size as in this work by Gambino et al 4 The influence of the ratio between droplet diameter and laser focal spot size (only for droplets larger than the focal spot size) on the plasma density and on the location of EUV emission was addressed by Yuspeh et al 18 The spatial and temporal plasma dynamics was characterized during the laser pulse with 280 lm diameter droplets, 19 and down to 50 lm diameter droplets with a laser spot size of 26 lm. 20 Additionally, the ionic population was measured in high vacuum for tin coated micro-balloons of 500 lm in diameter at 180 mm from the irradiation site.…”
Section: Introductionmentioning
confidence: 99%