2011
DOI: 10.1134/s1063782611030092
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Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

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Cited by 5 publications
(6 citation statements)
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“…The average value of the total current passing through the diode consists of the electron and hole currents and defined by the following equation [6] [7]:…”
Section: Theoretical Study Of Currents and Emf Of Hot Charge Carrier'mentioning
confidence: 99%
“…The average value of the total current passing through the diode consists of the electron and hole currents and defined by the following equation [6] [7]:…”
Section: Theoretical Study Of Currents and Emf Of Hot Charge Carrier'mentioning
confidence: 99%
“…In order to avoid straightening AC p-n-junction, in the measurement of the thermopower of hot carriers, the vector of the microwave electric field is directed perpendicular to the concentration gradient [2]. [3] studied the current and the emf arising in asymmetrical p-n-junctions under the influence of a strong microwave field. It revealed that, in asymmetric p-n-junction, a strong microwave field for the analysis of voltages and currents must be considered as the heating of electrons and holes.…”
Section: Introductionmentioning
confidence: 99%
“…The authors [2] believe that the values of the observed large abnormal current and emf depends on the recombination processes in the space charge region. On the basis of theoretical studies [3] it is shown that the open circuit voltage U oc asymmetrical p-n junction (p p >>n n ), located in a microwave field, determined by the modulation potential barrier height and temperature of holes. However, in these studies scouted EMF and current three-dimensional image of the surface f (j кз , T e , T h ,) и f (U хх , T e , T h ,) in the microwave field.…”
Section: Introductionmentioning
confidence: 99%