Heavily accumulated surfaces of mercury cadmium telluride detectors: Theory and experiment

Lowney, Jeremiah R.; Seiler, David G.; Thurber, W. R.; Yu, Zhonghai; Song, X. N.; Littler, C. I.

doi:10.1007/bf02817514

Cited by 6 publications

(1 citation statement)

References 12 publications

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“…27 For example, some passivated n-type mercury-cadmium-telluride photoconductive infrared detectors have 2D electron accumulation layers ͑n e ϳ 10 12 cm −2 ͒ at the surfaces, whose SdH peak varies as ͑cos ͒ −1 . 28 However, the angle dependence of SdH signals shown in Fig. 9 is not expressed by ͑cos ͒ −1 dependence.…”

Section: B Anisotropy Of Electron Localizationmentioning

confidence: 92%

Electron density dependence of the electronic structure of InN epitaxial layers grown on sapphire (0001)

et al. 2005

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The temperature dependence of the resistivity of InN was investigated as a function of carrier density. The carrier density was changed from n e = 1.8ϫ 10 18 cm −3 to 1.5ϫ 10 19 cm −3 by Si doping. The InN investigated showed metallic conduction above 20 K. At lower temperatures there was a resistivity anomaly originating from carrier localization in the a-b plane, which was confirmed by the magnetoresistance at 0.5 K. The Shubnikov-de Haas oscillation showed that InN had a spherical Fermi surface and its radius increased according to the increase of n e when n e Ͻ 5 ϫ 10 18 cm −3. In addition, an oscillation corresponding to the constant carrier density of 4.5ϫ 10 12 cm −2 was observed in the field applied perpendicular to the a-b plane. This oscillation showed an anomalous angle dependence on the magnetic field. Taking into account this density, we determined the critical carrier density of the Mott transition to be 2 ϫ 10 17 cm −3. Anisotropy of localization was observed within the a-b plane, which indicates that the distribution of the electrons was not uniform in the a-b plane. The n e dependence of the magnetoresistance revealed an electronic structure change around 5 ϫ 10 18 cm −3. From these results, an electronic structure at the fundamental absorption edge of InN grown on sapphire ͑0001͒ was presented.

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Section: B Anisotropy Of Electron Localizationmentioning

confidence: 92%