Heavily Crosslinked, High‐<i>k</i> Ultrathin Polymer Dielectrics for Flexible, Low‐Power Organic Thin‐Film Transistors (OTFTs)

Choi, Junhwan; Kang, Juyeon; Lee, Changhyeon; Jeong, Kihoon; Im, Sung Gap

doi:10.1002/aelm.202000314

Cited by 37 publications

(26 citation statements)

References 59 publications

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“…[103][104][105][106] In general, as the cross-linking density increases, the dielectric constant of the polymer is slowly decreased. 81,92,[107][108][109] Choi et al 110,111 synthesized two kinds of cross-linked high-k polymer films, using different cross-linkers: 1,4-butanediol divinyl ether with a short chain length and di(ethylene glycol) divinyl ether with a long chain spacer, by initiated chemical vapor deposition. Both polymers with different cross-linkers exhibited a reduced dielectric constant with increased cross-linking density.…”

Section: 123mentioning

confidence: 99%

Polymer-based dielectrics with high permittivity and low dielectric loss for flexible electronics

Wang

Yang

et al. 2022

J. Mater. Chem. C

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Section: 123mentioning

confidence: 99%

Polymer-based dielectrics with high permittivity and low dielectric loss for flexible electronics

Wang

Yang

et al. 2022

J. Mater. Chem. C

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“…First, the dielectric constants of these polymers are mostly in the range of 3.3-3.9. [116][117][118][119][120] Second, lack of solvent resistance is another weakness of some polymer dielectric materials. Therefore, several polymers have been shown to obtain good chemical resistance through the use of specific additional treatments.…”

Section: Polymer Dielectric Materialsmentioning

confidence: 99%

Recent Advances in Flexible Organic Synaptic Transistors

Liu

Huang

et al. 2021

Adv Elect Materials

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organic electronic devices have attracted substantial attention. [18][19][20][21][22][23][24] However, many issues still exist. For instance, the flexible substrates can be easily bent and thus cause damage to the devices or affect their electrical performance. Moreover, the flexible substrates are sensitive to operating conditions and are unstable during longterm operation. [25][26][27][28][29] Therefore, many research groups have dedicated their efforts to study and improve the flexibility and stretchability of organic electronic devices. [30][31][32][33] In recent years, organic three-terminal synaptic transistors have evolved from two-terminal devices to avoid the problem of crosstalk between adjacent cells. [34] This is an evolutionary structural design to improve the function of organic synaptic devices. In addition, the organic three-terminal synaptic transistors can be designed to form a highly interconnected neural network system. [35] At the same time, the organic three-terminal synaptic transistors can concurrently receive and read stimuli, which is conducive to the design of multiple input devices. [36] Currently, the threeterminal artificial synapses devices based on flexible organic transistors are considered to be the representative structures of biomimetic devices, which can be used to simulate the plasticity of biological synapses. [37,38] Compared with the traditional inorganic synaptic devices, the flexible organic synaptic transistors (FOSTs) can be used to simulate the plasticity of the human brain with a simpler structure and lower manufacturing cost. Therefore, a FOST is a promising component of future organic neuromorphic systems. [39][40][41][42][43][44][45][46] To date, the FOSTs have been widely used in wearable electronic devices and intelligent e-skins. [47][48][49] In 2018, a flexible artificial afferent nerve was reported by Xu et al. [47] representing significant progress toward the development of intelligent e-skin and soft robotics. This paper reviews the recent progress in the development of FOSTs and their applications in neuromorphic systems. Generally, the FOSTs are divided into four categories: flexible organic floating-gate synaptic transistors (FO-FGSTs), flexible organic ferroelectric-gate synaptic transistors (FO-FeGSTs), flexible organic electrolyte-gate synaptic transistors (FO-EGSTs), and flexible organic optoelectronic synaptic transistors (FO-OSTs). First, a brief introduction of the device structure mostly used in the FOSTs is provided. Then, the selection of substrate materials, gate dielectric materials, organic channel materials, and electrode materials in the FOSTs is summarized. Next, the major advances of these FOSTs and their potential applications are reviewed and discussed. Lastly, the summary, outlook, and In recent years, flexible organic synaptic transistors have attracted considerable attention due to their flexibility, biocompatibility, easy processability, and reduced complexity. Flexible organic synaptic transistors have functions and structures sim...

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“…A vapor-phase deposition method, termed initiated chemical vapor deposition (iCVD) has emerged as a powerful tool for fabricating high-purity polymer dielectrics. [50][51][52][53][54] The all-dry process allows for the synthesis of ultrathin polymer films without defects, highly advantageous for improving the insulating performance. [50,51] Furthermore, mixing arbitrary species is not constrained in vapor-phase, which enables to design and optimize the composition of the copolymer dielectric layer to achieve desirable electrical characteristics.…”

Section: Introductionmentioning

confidence: 99%

“…[53,54] In addition, the mild process condition near room temperature makes this process fully compatible with thermally vulnerable, flexible substrates such as plastics and papers. [51,52,55] In this paper, we present a strategy for fabricating ultrathin hybrid dielectrics by introducing a high-k polymer dielectric that is generally applicable to various inorganic materials with different processes. Poly(2-cyanoethyl acrylate-co-diethylene glycol divinyl ether) [p(CEA-co-DEGDVE)] with the optimized chemical composition (named pC1D1) was utilized as an organic layer, which showed dielectric constant higher than 6 as well as excellent insulating performance.…”

Section: Introductionmentioning

confidence: 99%

A Sub‐20 nm Organic/Inorganic Hybrid Dielectric for Ultralow‐Power Organic Thin‐Film Transistor (OTFT) With Enhanced Operational Stability

Choi

Lee

Kang

et al. 2022

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Organic/inorganic hybrid materials are utilized extensively as gate dielectric layers in organic thin‐film transistors (OTFTs). However, inherently low dielectric constant of organic materials and lack of a reliable deposition process for organic layers hamper the broad application of hybrid dielectric materials. Here, a universal strategy to synthesize high‐k hybrid dielectric materials by incorporating a high‐k polymer layer on top of various inorganic layers generated by different fabrication methods, including AlOx and HfOx, is presented. Those hybrid dielectrics commonly exhibit high capacitance (>300 nF·cm–2) as well as excellent insulating properties. A vapor‐phase deposition method is employed for precise control of the polymer film thickness. The ultralow‐voltage (<3 V) OTFTs are demonstrated based on the hybrid dielectric layer with 100% yield and uniform electrical characteristics. Moreover, the exceptionally high stability of OTFTs for long‐term operation (current change less than 5% even under 30 h of voltage stress at 2.0 MV·cm–1) is achieved. The hybrid dielectric is fully compatible with various substrates, which allows for the demonstration of intrinsically flexible OTFTs on the plastic substrate. It is believed that this approach for fabricating hybrid dielectrics by introducing the high‐k organic material can be a promising strategy for future low‐power, flexible electronics.

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Heavily Crosslinked, High‐k Ultrathin Polymer Dielectrics for Flexible, Low‐Power Organic Thin‐Film Transistors (OTFTs)

Cited by 37 publications

References 59 publications

Polymer-based dielectrics with high permittivity and low dielectric loss for flexible electronics

Polymer-based dielectrics with high permittivity and low dielectric loss for flexible electronics

Recent Advances in Flexible Organic Synaptic Transistors

A Sub‐20 nm Organic/Inorganic Hybrid Dielectric for Ultralow‐Power Organic Thin‐Film Transistor (OTFT) With Enhanced Operational Stability

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