Heavily Doped Polycrystalline 3C-SiC Growth on SiO₂/Si (100) Substrates for Resonator Applications

Abstract

3C-SiC is a promising material for the development of microelectromechanical systems (MEMS) applications in harsh environments. This paper presents the LPCVD growth of heavily nitrogen doped polycrystalline 3C-SiC films on Si wafers with 2.0 μm-thick silicon dioxide (SiO2) films for resonator applications. The growth has been performed via chemical vapor deposition using SiH4 and C2H4 precursor gases with carrier gas of H2 in a newly developed vertical CVD chamber. NH3 was used as n-type dopant. 3C-SiC films were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and room temperature Hall Effect measurements. It was shown that there is no voids at the interface between 3C-SiC and SiO2. Undoped 3C-SiC films show n-type conduction with resisitivity, Hall mobility, and carrier concentration at room temperature of about 0.56 ⋅cm, 54 cm2/Vs, and 2.0×1017 cm-3, respectively. The heavily nitrogen doped polycrystalline 3C-SiC with the resisitivity of less than 10-3 ⋅cm was obtained by in-situ doping. Polycrystalline SiC resonators have been fabricated preliminarily on these heavily doped SiC films with thickness of about 2 μm. Resonant frequency of 49.1 KHz was obtained under atmospheric pressure.

Effect of Growth Pressure on Structural Properties of SiC Film Grown on Insulator by Utilizing Graphene as a Buffer Layer

“…Two diffraction peak were found in the range from 20 to 40. The peaks at 33 is attributed to crystalline Si(200) peak [18]. Komura et.…”

Electrical Characterization of Undoped, N- and P-Type Thermal Annealed PECVD SiC Films Deposited on Transparent Insulator Substrates

“…Similar results were obtained by G. Sun et. al (13) in SiC grown by via chemical vapor deposition. The undoped 3C-SiC films also shown n-type conduction with resistivity, Hall mobility, and carrier concentration at room temperature of about 0.56 Ω.cm, 54 cm 2 /Vs, and 2.0×10 17 cm -3 , respectively.…”

Thermal conductivity reduction in highly-doped cubic SiC by phonon-defect and phonon-electron scattering

“…3C-SiC, with a simple zinc blende structure, can grow with high crystal quality on silicon and 4H-SiC substrates [6][7][8][9]. Heavily doped (10 18 -10 21 cm − 3 ) samples of this semiconductor are required for some applications [10][11][12]. In particular, highly B-doped and N-doped 3C-SiC can be applied in single-junction solar cells [13,14] and optoelectric devices [15,16], respectively.…”