Heavily p-Type Doped ZnSe and ZnBeSe

Abstract

Modulation growth techniques (d-doping) with the use of Te and N co-doping have been investigated to enhance the p-type doping of ZnSe and ZnBeSe. The highest net acceptor concentration achieved was 6 Â 10 18 cm À3 in ZnSe and 1:5 Â 10 18 cm À3 for ZnBeSe when a triple d-doping technique was used. The resultant layers have an average Te content of less than 3% and as low as 0.5% in some of the epilayers. We present results of C-V, I -V, and photoconductivity measurements that suggest high free carrier concentrations and low acceptor activation energy. We also discuss low temperature photoluminescence (PL) studies, which show that while the dominant PL is due to N impurities and of donor-acceptor pair type, some emission peaks related to Te 2 clusters and/or Te n!3 clusters are also present.

Third Order nonlinear optical susceptibility of ternary and quaternary ZnSe-based mixed crystals

“…One of the reasons is the relative weakness of the ZnSe lattice against defect formation. Extensive work has been done on fabricating laser diodes using ZnMgBeSe and ZnBeSe as the cladding and waveguiding layers [1][2][3]. Several research groups have focused specifically on ZnBeSe [4] for its usefulness as a waveguiding layer in laser diodes.…”

“…Several research groups have focused specifically on ZnBeSe [4] for its usefulness as a waveguiding layer in laser diodes. The use of the ZnBeSe ternary system has been suggested for improving the lattice hardness and, as a result, the device lifetime [1,2,[5][6][7]. ZnMgBeSe is very attractive material for full colour visible optical devices in wide wavelength range, because the band gap energy of ZnMgBeSe can be changed by variation of Mg and Be content [8,9] offering a possibility of tuning of the optical confinement [10,11].…”