Nanoscale zinc oxide (ZnO) rods of diameters close to the Bohr-exciton radius ( approximately 2 nm) can be prepared from a simple acetate precursor, resulting in ligand-capped rods of ZnO, highly dispersible in nonpolar solvents. Zinc oxide, ZnO, is a wide band-gap semiconductor with applications in blue/ultraviolet (UV) optoelectronic devices and piezoelectric devices. We observe self-assembly into uniform stacks of nanorods aligned parallel to each other with respect to the long axis, and photoluminescence measurements provide evidence for one-dimensional quantum confinement.

Wide-band-gap semiconductors typically can be doped either n type or p type, but not both. Compensation by native point defects has often been invoked as the source of this difficulty. We examine the wide-band-gap semiconductor ZnSe with first-principles total-energy calculations, using a mixed-basis program for an accurate description of the material. Formation energies are calculated for all native point defects in all relevant charge states; the effects of relaxation energies and vibrational entropies are investigated. The results conclusively show that native-point-defect concentrations are too low to cause compensation in stoichiometric ZnSe. We further find that, for nonstoichiometric ZnSe, native point defects compensate both n-type and p-type material; thus deviations from stoichiometry cannot explain why ZnSe can be doped only one way.

Nanocrystals of the wide band gap semiconductor zinc oxide of controllable morphologies were synthesized by a simple thermal decomposition method. The predominating factor in determining the morphology (spheres, triangular prisms, and rods) was the solvent, selected on the basis of coordinating power. The nanoparticles were structurally analyzed, and the photoluminescence of each shape was compared. The intensity of the green band emission, common to many ZnO structures, was found to vary with morphology. The strongest green band intensity corresponded to the shape with the largest surface/volume ratio and could be attributed to surface oxygen vacancies. Control over the morphology of ZnO at the nanoscale is presented as a means to control the green band emission.