Heavy-doping effects and impurity segregation during high-pressure oxidation of silicon

Fuoss, Dennis; Topich, James A.

doi:10.1063/1.91451

Cited by 11 publications

(6 citation statements)

References 11 publications

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“…First, oxidation temperatures are high enough to cause dopant redistribution, 16 which would tend to destroy the information of interest. Second, thermal oxidation rate has a significant dopant dependence.…”

Section: Sample Preparationmentioning

confidence: 99%

pn -junction delineation in Si devices using scanning capacitance spectroscopy

Edwards

Ukraintsev

Martin

et al. 2000

Journal of Applied Physics

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The scanning capacitance microscope ͑SCM͒ is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope ͑SPM͒. As reported in Edwards et al. ͓Appl. Phys. Lett. 72, 698 ͑1998͔͒, scanning capacitance spectroscopy ͑SCS͒ is a new data-taking method employing an SCM. SCS produces a two-dimensional map of the electrical pn junctions in a Si device and also provides an estimate of the depletion width. In this article, we report a series of microelectronics applications of SCS in which we image submicron transistors, Si bipolar transistors, and shallow-trench isolation structures. We describe two failure-analysis applications involving submicron transistors and shallow-trench isolation. We show a process-development application in which SCS provides microscopic evidence of the physical origins of the narrow-emitter effect in Si bipolar transistors. We image the depletion width in a Si bipolar transistor to explain an electric field-induced hot-carrier reliability failure. We show two sample geometries that can be used to examine different device properties.

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Section: Sample Preparationmentioning

confidence: 99%

pn -junction delineation in Si devices using scanning capacitance spectroscopy

Edwards

Ukraintsev

Martin

et al. 2000

Journal of Applied Physics

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“…The oxidation rate depends on environmental conditions such as temperature, pressure, humidity, and the possible presence of reacting agents as well as intrinsic sample properties such as surface morphology and type and density of free carriers. [2][3][4] The effect of carrier concentration on oxidation at elevated temperatures has been characterized by spectroscopic ellisometry (SE), [5,6] surface differential reflectance spectroscopy (SDR) [7], Auger electron spectroscopy (AES) [8], and X-ray photoelectron spectroscopy (XPS) [9], all of which probe oxide thickness. The oxidation rate has been found to increase with increasing carrier concentration.…”

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confidence: 99%

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Gökce

Aspnes

Lucovsky

et al. 2011

Applied Physics Letters

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It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.Usage: Secondary publications and information retrieval purposes. PACS numbers:1 arXiv:1011.4386v1 [cond-mat.mtrl-sci]

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“…Implanting nitrogen to form SOI structures has several possible advantages over implanting oxygen (9). First of all, hot filament, high current nitrogen implant sources…”

Section: Introductionmentioning

confidence: 99%

“…Significantly reduced oxidation temperatures have been achieved using thermal oxidation of silicon at elevated pressures of either steam (2,4,5) or dry oxygen (1,6,7). Additionally, reductions in arsenic and boron diffusion have been demonstrated using high pressure steam to reduce oxidation temperatures (8,9). A reduction in silicon stacking faults has also been obtained using high pressure steam (10).…”

mentioning

confidence: 99%

Electrical Properties of Silicon Dioxide Films Fabricated at 700°C: III . High Pressure Thermal Oxidation

Trombetta

Zeto

Feigl

et al. 1985

J. Electrochem. Soc.

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High quality thermal oxides of silicon have been fabricated on silicon substrates over the oxidation temperature range 635~176 Dry, high pressure oxidation (DRYPOX) was used to grow oxides at temperatures below 1000~ The high pressure range investigated was 2-500 arm. Standard capacitance-voltage techniques have been used to characterize these oxides in terms of oxide fixed change (Q~) and interface trap densities (Di,). Additionally, avalanche injection of both electrons and holes has been used to evaluate the charge trapping properties of these films. The electron trapping properties of 685~ high pressure oxides were compared with "conventional" 1000~ oxides fabricated at 1 arm and with oxides fabricated using low pressure chemical vapor deposition (LPCVD) at 730~ The results of these experiments were as fellows: (i) basic electrical properties of high pressure oxides, as well as hole and electron trapping behavior in these oxides, were similar to those of 1000~ conventional oxides; (it) hole trap densities exhibited a broad minimum at an oxidation temperature between 800 ~ and 900~ and (iii) electron trapping behavior in 685~ DRYPOX oxides was markedly superior to that in 730~ LPCVD oxides. The LPCVD oxide required an anneal at 1000~ to produce electron trapping characteristics comparable to those of DRYPOX samples processed entirely at temperatures below 700~

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Heavy-doping effects and impurity segregation during high-pressure oxidation of silicon

Cited by 11 publications

References 11 publications

pn -junction delineation in Si devices using scanning capacitance spectroscopy

pn -junction delineation in Si devices using scanning capacitance spectroscopy

Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Electrical Properties of Silicon Dioxide Films Fabricated at 700°C: III . High Pressure Thermal Oxidation

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