Silicon samples which were ion- implanted with boron or arsenic were oxidized in high-pressure (10 atm) pyrogenic steam to determine the effects of heavy doping on the oxide growth rate. Heavy n-type doping (arsenic) was found to enhance the silicon oxidation rate, but the enhancement was not as great as for oxidation at atmospheric pressure. For p-type (boron) doping there was only slight enhancement for both high-pressure and 1-atm oxidations. Samples were then depth profiled using secondary-ion mass spectroscopy (SIMS) to observe the segregation of boron and arsenic at the Si:SiO2 interface. The effective coefficients of the impurities for high-pressure oxidation were found to deviate significantly from those for atmospheric pressure oxidation.

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Collector‐emitter leakage (CE leakage) is an inherent problem in bipolar technology. In this paper, we have investigated a variety of process steps that improve the CE leakage performance in a self‐aligned double poly poly‐emitter bipolar integrated circuit process. Stress generated from deep trench processing and damage from reactive ion etching (RIE) are identified as major sources of CE leakage. Lack of substrate gettering capabilities, stress generated from furnace operations as well as inadequate prevention of device punch‐through phenomenon are also shown to create CE leakage. Several experiments that identify the CE leakage sources and improve circuit performance are presented.

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