Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

Chen, Dakai; Wilcox, Edward P.; Ladbury, Raymond L.; Seidleck, C.M.; Kim, Hak; Phan, Anthony; LaBel, Kenneth A.

doi:10.1109/tns.2017.2764852

Cited by 35 publications

(12 citation statements)

References 20 publications

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“…The damage caused is temporary in the case of soft errors but permanent for hard errors. A reliability problem arises in the memories due to the influence of an SEU [30]. The factors governing the SEU in memories are the sensitive region of the device and [37].…”

Section: Effect Of a Single-event Upset On Rrammentioning

confidence: 99%

Geometrical Variation of a Conductive Filament in RRAM and Its Impact on a Single-Event Upset

Vijay

Ramakrishnan

2022

ECTI-EEC

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Resistive random access memory (RRAM) is a promising candidate for industry and academia from the research and development perspective. The resistance of RRAM depends on the geometrical dimensions, growth, and rupture of the conductive filament. In this work, the geometrical dimensions such as the length and width of the filament are varied to analyze the resistance. Moreover, the RRAM can be used in aerospace applications. Therefore, the impact of a single-event upset on resistance of RRAM is investigated by means of a double exponential current pulse. The performance of the device is compared in terms of resistance before and after irradiation. A decrease in its original resistance has been observed after radiation.

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Section: Effect Of a Single-event Upset On Rrammentioning

confidence: 99%

Geometrical Variation of a Conductive Filament in RRAM and Its Impact on a Single-Event Upset

Vijay

Ramakrishnan

2022

ECTI-EEC

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“…As a result, these types of particle detectors provide an estimate of charge deposited due to the interaction with radiation by accurately measuring the threshold voltage shifts [106]. Unlike the SRAM based solutions, it is feasible to characterise the LET of the striking particle in flash memories and extract information about the nature of radiation (heavy ion, proton [107], neutron [108]).…”

Section: -D Nand Flash Based Radiation Monitorsmentioning

confidence: 99%

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

et al. 2021

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This article provides a review of semiconductor based ionising radiation sensors to measure accumulated dose and detect individual strikes of ionising particles. The measurement of ionising radiation (γ-ray, X-ray, high energy UV-ray and heavy ions, etc.) is essential in several critical reliability applications such as medical, aviation, space missions and high energy physics experiments considering safety and quality assurance. In the last few decades, numerous techniques based on semiconductor devices such as diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs) and solid-state photomultipliers (SSPMs), etc., have been reported to estimate the absorbed dose of radiation with sensitivity varying by several orders of magnitude from μGy to MGy. In addition, the mitigation of soft errors in integrated circuits essentially requires detection of charged particle induced transients and digital bit-flips in storage elements. Depending on the particle energies, flux and the application requirements, several sensing solutions such as diodes, static random access memory (SRAM) and NAND flash, etc., are reported in the literature. This article goes through the evolution of radiation dosimeters and particle detectors implemented using semiconductor technologies and summarises the features with emphasis on their underlying principles and applications. In addition, this article performs a comparison of the different methodologies while mentioning their advantages and limitations.

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“…Chen et al [65] investigated SEU behavior in a 128-Gb Hynix 3-D CTM product. The SEU susceptibility was found to be much lower in the SLC mode than in the MLC mode, as with other flash technologies.…”

Section: Radiation Effects In Charge Storage Memoriesmentioning

confidence: 99%

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

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Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

Cited by 35 publications

References 20 publications

Geometrical Variation of a Conductive Filament in RRAM and Its Impact on a Single-Event Upset

Geometrical Variation of a Conductive Filament in RRAM and Its Impact on a Single-Event Upset

A Review of Semiconductor Based Ionising Radiation Sensors Used in Harsh Radiation Environments and Their Applications

Radiation Effects in Advanced and Emerging Nonvolatile Memories

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