Heavy Ion Transport Modeling for Single-Event Burnout in SiC-Based Power Devices

McPherson, Joseph A.; Kowal, Peter J.; Pandey, Gyanesh; Chow, T. Paul; Ji, Wei; Woodworth, Andrew A.

doi:10.1109/tns.2018.2880865

Cited by 39 publications

(15 citation statements)

References 9 publications

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“…The thermal conductivity, thermal resistance, and heat capacity parameters related to the electrothermal effect were modified according to the experimental results in the literature. [17,18] The thermal conductivity, thermal resistance, and heat capacity, respectively, follow the following formulas: [12]…”

Section: Tcad Model Setupmentioning

confidence: 99%

“…The melting point of SiC is generally in a range of 2900 K-3100 K. [12] In this simulation, it was assumed that its melting point is 3000 K, which is regarded as the critical temperature T c for SEB of SiC MOSFET. In the SEB sensitivity simulation of SiC MOSFET iat different incident locations, the depth parameter of heavy-ion incidence is 60 µm, which is the Monte Carlo simulation result.…”

Section: Seb Sensitivity Of Mosfet At Different Heavy-ion Incidence P...mentioning

confidence: 99%

“…Witulski et al [11] found in the TCAD simulation that when the LET value is greater than 20, the SEB threshold is relatively insensitive to LET, and proposed that the opening of the parasitic bipolar transistor inherent in SiC MOSFET leads to SEB. McPherson et al [12] proposed that ion-induced energy pulses of different magnitudes are regarded as a common mechanism responsible for catastrophic SEB and degradation in SiC MOSFETs and JBS diodes, the co-existence of high current and high voltage leads to the strong energy pulses in the device. Lattice heating was not considered in Refs.…”

Section: Introductionmentioning

confidence: 99%

“…Lattice heating was not considered in Refs. [11,12], and the single-event-effect model parameters used in the two papers do not take the influence of ion transport process into account. Ball et al [13] used Monte Carlo simulation to obtain a clear picture of energy deposition and resulting charge carrier production in SiC.…”

Section: Introductionmentioning

confidence: 99%

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Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

Zhang¹,

Guo²,

Zhang³

et al. 2022

Chinese Phys. B

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The energy deposition and electrothermal behavior of SiC metal–oxide–semiconductor field-effect transistor (MOSFET) under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation. The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track. The time for energy deposition in SiC is on the order of picoseconds. The TCAD is used to simulate the single event burnout (SEB) sensitivity of SiC MOSFET at four representative incident positions and four incident depths. When heavy ions strike vertically from SiC MOSFET source electrode, the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer, strike from the channel, and strike from the body diode region. High current and strong electric field simultaneously appear in the local area of SiC MOSFET, resulting in excessive power dissipation, further leading to excessive high lattice temperature. The gate–source junction area and the substrate–epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature. In the SEB simulation of SiC MOSFET at different incident depths, when the incident depth does not exceed the device’s epitaxial layer, the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.

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Section: Tcad Model Setupmentioning

confidence: 99%

Section: Seb Sensitivity Of Mosfet At Different Heavy-ion Incidence P...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

Zhang¹,

Guo²,

Zhang³

et al. 2022

Chinese Phys. B

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“…Single event burnout (SEB), induced by high-energy ionizing particles, is a vital reliability concern for electronic power devices used in aerospace applications; the resulting catastrophic failures make it impossible to guarantee power system performance in the space radiation environment. To determine the critical factors affecting SEB, the test device has typically been evaluated by accelerated particle beams, such as heavy ions [1][2][3]. However, the absence of focusing capability makes it difficult to apply ion beams to systematic investigation of SEB with high spatial resolution, and the operation is relatively expensive [4].…”

Section: Introductionmentioning

confidence: 99%

Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Cui

Shipeng

et al. 2022

Photonics

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Single event burnout (SEB) is a great threat to gallium nitride (GaN) power devices for aerospace applications. This paper is dedicated to the investigation of the SEB mechanism in a GaN power device using a femtosecond pulsed laser. In the test, the SEB of a commercial p-GaN power device was triggered by a focused laser beam with a wavelength of 620 nm, and the irradiation-sensitive area of the devices was identified. We observed that the damage modes were consistent with the results of heavy ion experiments. The vertical breakdown of the drain is proposed as the dominant mechanism of SEB. We also provide a schematic representation of the leakage path formation using the electrical data obtained following laser-induced SEB. This study provides an important reference for consideration of device reliability and application prospects.

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Negative thermal expansion coefficient and amorphization in defective 4H-SiC

Grome,

Hossain

2024

Appl. Phys. A

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Heavy Ion Transport Modeling for Single-Event Burnout in SiC-Based Power Devices

Cited by 39 publications

References 9 publications

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

Study of Single Event Burnout Mechanism in GaN Power Devices Using Femtosecond Pulsed Laser

Negative thermal expansion coefficient and amorphization in defective 4H-SiC

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