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We have studied capacitance mode Deep Level Transient Spectroscopy (DLTS) of five 4H-SiC Schottky diode and PiN diode designs. Comparing with previous DLTS studies, we have identified four traps levels, Z1/2, EH1, EH3and EH5. Additionally, a new trap level, EH1, is prominent in blanket Al+and B+high-energy implanted samples but less so in mask-implanted samples. Al+implantation increases EH3(associated with silicon vacancy) and EH5, while B+implantation significantly reduces EH3. The Z1/2peak (associated with carbon vacancy) is reduced to very low levels after B+and Al+implantation.

The electrical behavior of silicon carbide charge-balance (CB) Schottky/JBS diodes is examined. Based on the observed electrical characteristics, a subcircuit SPICE model for the experimental devices is proposed and validated against the data. The proposed model consists of a standard SPICE diode with custom parameters along with a network of discrete resistive and reactive subcircuit elements required to replicate the complex static and dynamic behavior of the experimental devices. With proper selection of component values, static, dynamic, and temperature-dependent device behavior are well modelled from room temperature to 150°C.

In this paper, the design and simulation of cylindrical, co-axial, Carbon Nanotube Field Effect Transistor (CNTFET) is presented using online Fettoy tool of Nanohub. This tool can provide various characteristics of CNTFET, like transfer characteristics, output characteristics, average velocity vs. gate voltage etc. To simulate the CNTFET we have considered the value of diameter of carbon nanotube 1nm which is of (13,0) chirality. Gate insulator thickness is taken as 1.5nm and the dielectic constant of the material used as gate oxide is k=20 , which is the value shown by ZrO 2 .A comparison between designed CNTFET and conventional MOSFET shows improvement of various parameters which plays a significant role in design of logic circuits. With these improved properties of CNTFETs it can be concluded that it is very useful in designing of reversible logic circuits. Also, it is very efficient in terms of power consumption, speed of operations, and leakage current over conventional MOSFETs.