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DISCLAIMER (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GdnSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GdnAsSb lattice-matched quaternaries were grown by MOVPE and by liquid phase epitaxy (LPE). Improved devices are obtained when optical absorption occurs in the player due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitterjthick base n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts.

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A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.

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