Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs

Chowdhury, Sauvik; Hitchcock, Collin; Stum, Zachary; Dahal, R.; Bhat, Ishwara B.; Chow, T. Paul

doi:10.1109/ted.2016.2631241

Cited by 21 publications

(9 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fig. 3 shows the calculated 1D lateral static performances of a lateral bulk conduction [15]- [17], [19]. The lines represent the calculated ideal characteristics at RT and 250 • C of the bidirectional lateral D3MOSFET device with gate lengths and gate to source lengths of 1 µm and optimized drift lengths.…”

Section: Perspectivesmentioning

confidence: 99%

High temperature operation of a monolithic bidirectional diamond switch

Masante

Pernot

Maréchal

et al. 2021

Diamond and Related Materials

View full text Add to dashboard Cite

We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm −3 and an Al 2 O 3 gate oxide thickness of 50 nm. The I st and III rd quadrants transistor characteristics are successfully measured by controlling the channel conductivity with both gates separately, with a clear ON and OFF state. A threshold voltage around 35 V is obtained with a low minimum gate leakage current of 1.00 × 10 −4 mA/mm at a gate-source bias V GS = 50 V. The bidirectional switch is then obtained by operating the MOSFET in the I st quadrant of each gate setup. This first proof of concept offers a reverse conducting and reverse blocking diamond MOSFET, with only one drift region layer.

show abstract

Section: Perspectivesmentioning

confidence: 99%

High temperature operation of a monolithic bidirectional diamond switch

Masante

Pernot

Maréchal

et al. 2021

Diamond and Related Materials

View full text Add to dashboard Cite

show abstract

“…It is noted that Si power devices will continue play an important role because of its competitive or even better performances for low to medium power applications. However, both GaN and SiC has the potential to allow bidirectional voltage blocking capability, making them very appealing for future bidirectional power and energy processing applications [24,25].…”

Section: A Wbg Devices Applicationsmentioning

confidence: 99%

Power Electronics: Historical Notes, Recent Advances And Contemporary Challenges

Tan¹

2020

Eletrônica de Potência

View full text Add to dashboard Cite

This paper attempts to summarize 10 major contemporary challenges for power electronics and system technology (PEAS technology). Historical background is first reviewed together with most recent technological advances. Recent advances are then discussed in detail. A recent breakthrough in megawatt system design and design verification is highlighted. We then articulate the challenges that PEAS technology is facing contemporarily. They are: Powering smart buildings, smart factories, and smart infrastructure, Renewable energy integration and structured microgrids, EV drives and vehicle power systems, Ultra-fast and ultra-efficient chargers, Appliances - “White goods,” Server and data center power systems’ Wireless power transfer, Powering IoT and wireless sensor networks, Storage and “power dump,” and ATGC (All things grid connected), system integration, and dynamic control. These 10 areas present technical barriers for us to overcome and anticipated progress will help define the future of power electronics and its impact to the power and energy industry at large.

show abstract

“…The full potential of the topology and control method can be realised by applying discrete bidirectional switches. Samples of such devices are manufactured and reported for Si [57,58], SiC [59,60] and GaN [61,62] semiconductor technologies. Table 2 Qualitative and quantitative comparison of competing topologies (V CF = 20 V, V VF = 400 V, P rated = 300 W f sw = 100 kHz) Parameter Topologies VF DAB [63] Active clamp [25] SMB-HB [34] Proposed (Fig.…”

Section: Experimental Verification and Analysismentioning

confidence: 99%

Section: Experimental Verification and Analysismentioning

confidence: 99%

Bidirectional soft‐switching dc–dc converter for battery energy storage systems

Blinov¹,

Kosenko²,

Chub³

et al. 2018

IET Power Electronics

View full text Add to dashboard Cite

The study introduces a bidirectional dc-dc converter with current-and voltage-fed (VF) ports that features soft switching in both buck and boost operating modes. The converter can be used for integration of low-voltage DC sources, such as batteries into a dc bus of considerably higher voltage or a dc link of a grid side inverter. Zero current switching, assisted with the leakage inductance of the isolation transformer, can be achieved at the current-fed side along with zero voltage switching of the VF side, assisted by snubber or intrinsic capacitances of the transistors. Soft switching can be maintained over a wide range of voltage and power levels, regardless of the energy transfer direction. Converter operation is described and theoretical findings were verified with experimental results obtained by means of a 300 W prototype operating at a switching frequency of 100 kHz and designed for integration of a 24 V battery into 400 V dc bus. The converter proposed is compared in terms of efficiency to other competing soft-switching full-bridge topologies implemented with the same components.

show abstract

Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs

Cited by 21 publications

References 34 publications

High temperature operation of a monolithic bidirectional diamond switch

High temperature operation of a monolithic bidirectional diamond switch

Power Electronics: Historical Notes, Recent Advances And Contemporary Challenges

Bidirectional soft‐switching dc–dc converter for battery energy storage systems

Contact Info

Product

Resources

About