In this study, the resistive switching characteristics of a ZrO(2)-based memory film with an embedded Mo layer are investigated. The experimental results show that the forming process can be removed by inserting an embedded Mo metal layer within ZrO(2) via a post-annealing process. The excellent memory performance, which includes lower operation voltage (<1.5 V), good endurance (>10(3) cycles), a stubborn nondestructive readout property (>10(4) s), and long retention time (>10(7) s), is also demonstrated. Moreover, high-speed operation (10 ns) can be successively maintained over 10(3) cycles without any operational errors observed in this memory device. Due to the interface layer induced by the Ti top electrode, the formation and rupture of conducting filaments are suggested to occur near the Ti/ZrO(2) interface. The oxygen vacancies induced by the embedded Mo can enhance the formation of conducting filaments and further improve the switching characteristics in ZrO(2)-based devices.

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The in-plane and out-of-plane mobility-lifetime products of electrons and holes in free-standing hexagonal boron nitride (hBN) films are extracted from current-voltage characteristics of metal-hBN-metal structures measured under external excitations. The in-plane mobility-lifetime products for electrons and holes are >2.8 ' 10 %5 and >4.85 ' 10 %6 cm 2 /V, measured from lateral carrier collection, whereas the out-of-plane mobilitylifetime products for electrons and holes are >5.8 ' 10 %8 and >6.1 ' 10 %9 cm 2 /V, measured from vertical carrier collection, respectively. The mobility-lifetime product is a few orders of magnitude higher along the plane than along the out of plane in hBN films.

A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.

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