1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

Wu, Jia; Chowdhury, Sauvik; Hitchcock, Collin; Lu, James; Chow, T. Paul; Kim, Woochan; Ngo, Khai D. T.

doi:10.1109/ispsd.2014.6855984

Cited by 18 publications

(11 citation statements)

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“…The Dual-Gate Bidirectional IGBT (BD-IGBT or DGIGBT) was first proposed in 1988 by Nakagawa [33]. Fabrication techniques to realise this structure have since been developed and in 2014 a 1200V 25A single-chip dual-gate BD-IGBT was manufactured with a fusion wafer bonding process [34] but fabrication of IGBTs with lower breakdown voltages using this method have resulted non-ideal electrical performance [34].…”

Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

“…It is also possible to exhibit MOSFET behaviour when the current is lower than a threshold value IH (typically ~4A/cm 2 ) such that the backside p-well is biased by <0.7V so hole injection does not occur. It is this transition from MOSFET mode to quasi-IGBT mode which exhibits the snapback characteristic in the I-V curve, however, in this operation mode much higher switching speeds can be achieved than in the IGBT mode [35] and higher back-gate voltage reduces the susceptibility of the breakdown voltage and leakage currents with temperature [34]. It has been reported that multifaceted gate drive schemes can be implemented to optimise the switching and on-state losses of the device for various applications [35].…”

Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

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Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

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Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

Section: B Rc-igbt With Alternating N/p Buffers (Ab Rc-igbt)mentioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…The processing requirements for the backside are not as stringent as for the frontside since there are no cathode or gate structures. The two halves would be first bonded to glass carriers [13] and then etched to remove the excess wafer required for the SJ trench formation. The wafers are then bonded using a wafer bonding process as demonstrated in [13]- [16].…”

Section: Introductionmentioning

confidence: 99%

“…The two halves would be first bonded to glass carriers [13] and then etched to remove the excess wafer required for the SJ trench formation. The wafers are then bonded using a wafer bonding process as demonstrated in [13]- [16]. These studies have shown that the IGBT performance does not degrade using this technique.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

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Udrea

Antoniou

2019

IEEE Electron Device Lett.

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This letter presents the Dual Implant SuperJunction (SJ) trench Reverse-Conducting (RC) Insulated Gate Bipolar Transistor (IGBT) concept with two implanted SJ pillars in the drift region; one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2kV device as alignment between the pillars is not required. Extensive Technology Computer Aided Design (TCAD) simulations have been performed and demonstrated that utilising this dual implantation technique can result in a 77% reduction in turn-off losses for a full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the on-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar gap < 10μm) warrants the additional processing expense. 

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“…However, the conventional RC-IGBT is not suitable for parallel operation due to its snapback phenomena at forward on-state [2]. To suppress snapback, bi-mode insulated gate transistors [3], RC-IGBTs with floating p-region [4][5][6][7], RC-IGBTs with antiparallel thyristor [8][9][10], and RC-IGBTs with double gates [11][12][13] are proposed. This Letter proposes a new RC-IGBT, i.e.…”

mentioning

confidence: 99%

Snapback‐free reverse conducting IGBT with p‐poly trench‐collectors

Huang

Xie

et al. 2020

Electron. lett.

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A reverse conducting (RC) insulated-gate bipolar transistor (IGBT) with p-poly trench-collectors is proposed. A narrow n-drift region between two p-poly trench-collectors is formed as a self-controlled electron path to the collector contact. Owing to the built-in potential between the p-poly and n-drift regions, the narrow n-drift region is depleted to offer a high-resistance electron path at forward bias, which helps to suppress snapback. At reverse bias, holes accumulate at the n-drift/trench-collector interface and then the potential difference between the p-poly and n-drift regions mainly drops at the thin oxide layer. Thus, the narrow n-drift becomes undepleted to offer a low-resistance electron path, and the RC diode can be turned on. Simulation results show that the proposed RC-IGBT is able to suppress snapback with a much smaller cell width and obtain a 21% lower turnoff loss compared to the conventional RC-IGBT.

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1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

Cited by 18 publications

References 0 publications

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Snapback‐free reverse conducting IGBT with p‐poly trench‐collectors

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