A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window

Deng, Xiaochuan; Li, Lijun; Wu, Jia; Li, Chengzhan; Chen, Wanjun; Li, Juntao; Li, Zhaoji; Zhang, Bo

doi:10.1109/ted.2017.2761995

Cited by 35 publications

(14 citation statements)

References 23 publications

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“…These structures are, however, mainly targeting p-type thyristor structures [20], [21], [32]. Termination structures that combine guard-rings with single/multiple JTE regions (i.e., ring-assisted-JTEs [26], [33], hybrid-JTE [26] SM-JTE [7], [10], multiple-ring-modulated JTE [34], and counter-doped (CD)-JTE [25]) provide high breakdown voltages (i.e., close to ideal VB,PP) in combination with a wide dose margin, yet with a small process increase [25], [26]. Moreover, ion implantation combined with step with step etching [23], [24] are relatively area-efficient but may be sensitive to processing spread of the ring width and charges at the oxide interface [23] and, hence, offer a narrow processing window.…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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“…BV is sensitive to the variation of the F ion dose, resulting in difficulty in achieving high BV with SZ-FIT. In the previous works on junction-based termination in SiC and Si power devices, it has been found that a tapered distribution of termination dose implemented by partial recess or multiple implantation steps could enable a larger dose window [35]- [37]. In this work, in order to further optimize the FIT towards higher BV with a better tolerance to the possible deviation of F ion dose, partial recess would be implemented in the FIT region to form a DZ-FIT structure without any additional implantation step.…”

Section: Double-zone Fit (Dz-fit)mentioning

confidence: 99%

Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

Liu

Yang

Sheng

2020

IEEE J. Electron Devices Soc.

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Gallium nitride (GaN)-based power devices enable high power density and high switching frequency for power electronics systems. For the emerging vertical GaN devices, the electric field crowding around the edge of the main junction could result in premature breakdown. It is challenging to employ the commonly used junction-based termination techniques as in Si and SiC high-voltage devices for vertical GaN devices, due to the difficulty of selective p-type doping and activation in GaN. In this work, based on the unique feature of the negatively charged F ions in GaN which can favorably modulate the edge electric field, a fluorine-implanted termination (FIT) structure for vertical GaN PiN diodes has been designed and optimized to suppress the electric field crowding at the junction edge for a higher breakdown voltage (BV). The key parameters of the FIT, including the F ion dose, the thickness and width of the FIT and the angle of the bevel structure, have been comprehensively investigated by TCAD simulations to reveal their impacts on BV. Moreover, with a tapered dose distribution in the FIT, the device can achieve a higher BV with an enlarged FIT dose window. INDEX TERMS GaN-on-GaN, breakdown voltage, edge termination, fluorine ion implantation, PiN diode.

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“…for high blocking voltage. In consequence, multiple P-i-N devices have been demonstrated ranging 4.5kV-15kV [19], [24]- [27].…”

Section: Introductionmentioning

confidence: 99%

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

Arvanitopoulos

Antoniou

Perkins

et al. 2019

IEEE Trans. on Ind. Applicat.

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Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well developed polytype of SiC, the 4H-SiC, should exist. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device design, analysis and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is best suited. In this work, we validate the recently developed Technology Computer Aided Design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C-and 4H-SiC vertical power diodes are assessed, to create trade-off maps. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available.

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A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window

Cited by 35 publications

References 23 publications

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Design and Optimization of Vertical GaN PiN Diodes With Fluorine-Implanted Termination

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

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