(Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

Dalmau, Rafael; Craft, H. S.; Schlesser, R.; Mita, Seiji; Smart, J.; Hitchcock, Collin; Pandey, Gyanesh; Chow, T. Paul; Moody, Baxter

doi:10.1149/08007.0217ecst

Cited by 8 publications

(2 citation statements)

References 26 publications

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“…Significant challenges remain in the growth of high Al composition AlGaN, including efficient n-type doping at very high Al compositions, and, even more so, p-type doping in general. In spite of these challenges, high-quality, controllably-doped AlGaN epilayers grown on AlN single crystal substrates have been demonstrated in devices, including UV emitters (2) and Schottky diodes (3). Improved approaches to doping the high Al composition AlGaN layers required for operation of these devices will lead to increased device performance.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

Dalmau

Moody

2018

ECS Trans.

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Compositionally graded Al x Ga1-x N epilayers were coherently grown on AlN single crystal substrates by MOCVD, and polarization-induced doping was determined by contactless sheet resistance and capacitance-voltage measurements on unintentionally doped, n-type graded layers; and by temperature-dependent Hall effect measurements on a Mg doped, p-type graded layer. The room-temperature resistivity, hole concentration, and hole mobility of the p-type layer graded from x= 1.0 to x= 0.36 were 1.2 Ωcm, 4.5x1018 cm-3, and 1.2 cm2/Vs, respectively, which represents a significant improvement over traditional, thermally-activated Mg doping in AlGaN alloys.

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Section: Introductionmentioning

confidence: 99%

(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

Dalmau

Moody

2018

ECS Trans.

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“…attention for their potential use in vertical power devices [3], [4], [5], [6]. However, even with the utilization of these high-quality AlN substrates, AlN-based vertical devices with ideal electrical properties have yet to be realized [7], [8], [9]. A major technical challenge for these devices is achieving controlled conductivity across a broad range.…”

mentioning

confidence: 99%

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

Kumabe,

Yoshikawa,

Kawasaki

et al. 2024

IEEE Trans. Electron Devices

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Nearly ideal vertical Al x Ga 1−x N (0.7 ≤ x < 1.0) p-n diodes are fabricated on an aluminum nitride (AlN) substrate. Distributed polarization doping (DPD) was employed for both p-type and n-type layers of the p-n junction, instead of conventional impurity doping, to overcome the major bottleneck of AlN-based material: the control of conductivity. Capacitance-voltage measurements revealed that the net charge concentration agreed well with the DPD charge concentration expected from the device layer structure. The fabricated devices exhibited a low turn-on voltage of 6.5 V, a low differential specific ON-resistance of 3 M cm 2 , electroluminescence (maximum at 5.1 eV), and an ideality factor of 2 for a wide range of temperatures (room temperature-573 K). Moreover, the breakdown electric field was 7.3 MV cm −1 , which was almost twice as high as the reported critical electric field of GaN at the same doping concentration. These results clearly demonstrate the usefulness of DPD in the fabrication of high-performance AlN-based power devices.

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State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport

Yao

Zhang

et al. 2023

Journal of Crystal Growth

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(Invited) Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates

Cited by 8 publications

References 26 publications

(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

(Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport

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