Heavy ions irradiated crystal GaAs as an active non-linear matrix for the generation of THz radiation

Назаров, М. М.; Shepelev, A. V.; Shkurinov, A. P.; Skuratov, V.A.; Zagorski, D.L.

doi:10.1016/j.radmeas.2008.04.067

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Conversion In Semiconductor Devices1

Frequency Thz1

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2009

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(2 citation statements)

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“…Despite the significantly different radiation mechanism (based on the motion of photoelectrons in either external or internal field near the surface), the optically opaque semiconductors [17] can ensure the emission efficiency and spectral width of the terahertz radiation comparable with those for crystals. For semiconductors, emission in the low-frequency terahertz range is more efficient, whereas in the high-frequency range it is less efficient compared with the conversion efficiency in nonlinear crystals.…”

Section: Conversion In Semiconductor Devicesmentioning

confidence: 99%

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On the choice of nonlinear optical and semiconductor converters of femtosecond laser pulses into terahertz range

Назаров

Shkurinov

Angeluts

et al. 2009

Radiophys Quantum El

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We carried out an experimental study of the use of nonlinear crystals ZnTe, GaP, GaSe, DAST, and LiNbO 3 and semiconductors GaAs and InAs for the rectification of femtosecond optical pulses. This conversion produces broadband terahertz pulses consisting of a single period of the field oscillation. Here, we discuss features of different types of the terahertz converters, their efficiency, and spectral range.

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Section: Conversion In Semiconductor Devicesmentioning

confidence: 99%

“…We studied the possibility to increase the terahertz-pulse emission efficiency by creating on the GaAs surface nano-channels (defects) about 20 µm in length and 20 nm in diameter [17]. For the sample with the channels oriented normally to the surface, the intensity of the generated radiation increases almost twice.…”

Section: Frequency Thzmentioning

confidence: 99%