Height-dependent nucleation and ideal layer by layer growth in Pb/Pb(111)/Si(111)

Binz, Steven Michael; Hupalo, M.; Tringides, Michael C.

doi:10.1103/physrevb.78.193407

Cited by 20 publications

(26 citation statements)

References 28 publications

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“…This fractal shape is clearly seen in Fig. 3(b) and it is a characteristic of Diffusion-Limited Aggregation (DLA) 32,33 which results from the low mobility of deposited Pb atoms at the experimental growth temperature. All fractal islands are 1 ML high as shown in the line profile (Fig.…”

Section: Shown Inmentioning

confidence: 89%

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

et al. 2013

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Abstract:Quantum oscillations of work function and film stability as a function of the film thickness in Pb thin films on Si(111) are measured directly using scanning tunneling microscopy and spectroscopy in order to determine their phase relationship. The comparison of the phase relationship in quantum oscillations (surface energy vs. work function) reveals a complete surprise: in contrast to a theoretically predicted 1/4 wavelength phase shift in the phase relationship, we found that their quantum oscillations have identical phase for this particular system. A conjecture to resolve this contradiction is also provided.

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Section: Shown Inmentioning

confidence: 89%

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

et al. 2013

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“…5. On the Si (111) surface region [4] is very narrow and the 2";3 x 2";3 reconstruction (Fig. 6( c)) is observed in this region [31].…”

Section: Methodsmentioning

confidence: 99%

“…The dangling bond density on the (113) surface is less than that on the (337) which in turn is less than that on the (225) unit [15], and is manifested in the desorption sequence as well. The desorption region around 600°C (region [4]) marks the formation of 2x(337) facet which, owing to the lesser number of dangling bonds, shows comparatively weaker bonding and hence allows faster desorption as compared to the final desorption from the (225) facet (region [5]). Finally above 600°C on (111) and around 850°C on (55 12) surfaces, we retrieve the clean 7 x 7 and 2 xl reconstructions, respectively.…”

Section: Methodsmentioning

confidence: 99%

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Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

et al. 2010

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Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (55 12)-2x1 surface and compare it with the observations on planar Si (111) -7 x 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111 )-7 x 7 surface. On Si (5512) 2 x 1 surface we observe the sequential2x (225), 2x (337) and 2x (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.

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“…Theoretical and experimental studies indicated that structural and morphological properties of ultrathin Pb films are related to QSE. Minimization of the total internal energy of Pb island with a thickness dependent QSE electronic component leads to the growth of islands with preferential magic thicknesses [10,11,14,[28][29][30][31]. In a continuous layer this minimization manifests itself as a variation of the measured Pb apparent step height (ASH).…”

Section: Introductionmentioning

confidence: 99%

Spilling of electronic states in Pb quantum wells

2016

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Energy-dependent apparent step heights of two-dimensional ultra-thin Pb islands grown on the Si(111)6×6Au surface have been investigated by a combination of scanning tunneling microscopy, first-principles density functional theory and the particle in a box model calculations. The apparent step height shows the thickness and energy dependent oscillatory behavior, which is directly related to the spilling of electron states into the vacuum exhibiting a quantum size effect. This has been unambiguously proven by extensive first-principles scanning tunneling microscopy and spectroscopy simulations. An electronic contribution to the apparent step height is directly determined. At certain energies it reaches values as high as a half of the atomic contribution. The applicability of the particle in a box model to the spilling of electron states is also discussed.

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Height-dependent nucleation and ideal layer by layer growth in Pb/Pb(111)/Si(111)

Cited by 20 publications

References 28 publications

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

Anomalous phase relations of quantum size effects in ultrathin Pb films on Si(111)

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Spilling of electronic states in Pb quantum wells

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