Helium ion microscope invasiveness and imaging study for semiconductor applications

Livengood, Richard H.; Greenzweig, Yuval; Liang, Ted; Grumski, Michael

doi:10.1116/1.2794319

Cited by 27 publications

(19 citation statements)

References 8 publications

(7 reference statements)

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“…maybe the tool is ready for retirement (Joy, 2007)? Nonetheless, Joy (2007 presents three areas for consideration: (i) aberrationcorrected SEM has the promise today for o1 nm probe diameters at 5 keV, such as the recently introduced JEOL 7700F; (ii) very high electron accelerating voltages between 200 and 400 keV is another approach; and (iii) a more novel perspective taps the very short wavelength of He-ions (Livengood et al 2007). Based on the author's earlier experience with high-energy electrons, option (ii) and most likely (iii) will be detrimental to SEM modes, such as EBIC and CL, because of radiation (displacement) damage.…”

Section: Introductionmentioning

confidence: 99%

SEM characterization of silicon nanostructures: can we meet the challenge?

et al. 2008

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The current semiconductor technology road map for device scaling champions a 4.5 nm gate length in production by 2022. The scanning electron microscope (SEM) as applied to critical dimensions (CD) metrology and associated characterization modes such as electron beam-induced current and cathodoluminescence (CL) has proved to be a workhorse for the semiconductor industry during the microelectronics era. We review some of the challenges facing these techniques in light of the silicon nanotechnology road map. We present some new results using voltage contrast imaging and CL spectroscopy of top-down fabricated silicon nanopillar/nanowires (<100 nm diameter), which highlight the visualization challenge. However, both techniques offer the promise of providing process characterization on the 10-20 nm scale with existing technology. Visualization at the 1 nm scale with these techniques may have to wait for aberration-corrected SEM to become more widely available. Basic secondary electron imaging and CD applications may be separately addressed by the He-ion microscope.

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Section: Introductionmentioning

confidence: 99%

SEM characterization of silicon nanostructures: can we meet the challenge?

et al. 2008

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“…The above-mentioned nanomachining technologies involve lighter particles ͑in comparison to Ga ions͒ but have larger penetration depths in matter 5,15,16 ͑for equal energy͒. Naturally, lower acceleration voltages are chosen to minimize volume of interaction and gain better machining acuity.…”

Section: Introductionmentioning

confidence: 99%

“…5,[17][18][19][20][21] Light ion irradiation may ͑in addition to further gate oxide effects͒ introduce lattice damage and material swelling, 16,[22][23][24] which may degrade CMOS channel carrier mobility due to enhanced carrier scattering, or alter mobility due to device strain alteration.…”

Section: Introductionmentioning

confidence: 99%

“…However, there is much promise in the recent exploration of technologies with narrower beam profiles and smaller interaction volumes. Such alternative focused ion beam ͑FIB͒ sources on the horizon include noble ion gas field ionization source [5][6][7][8][9] and magnetooptical trap ion source. 10 These technologies promise beam widths on the nanometer to subnanometer scale, but their nanomachining capabilities are still largely unexplored.…”

Section: Introductionmentioning

confidence: 99%

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E-beam invasiveness on 65 nm complementary metal-oxide semiconductor circuitry

Greenzweig

Drezner

Raveh

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inFully complementary metal-oxide-semiconductor compatible nanoplasmonic slot waveguides for silicon electronic photonic integrated circuits Appl. Phys. Lett. 98, 021107 (2011); 10.1063/1.3537964 Fabrication of complementary metal-oxide-semiconductor integrated nanomechanical devices by ion beam patterning J.Gas-assisted focused electron beam and ion beam processing and fabrication

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“…SRIM has seen common use in the simulation of target damage due to the HIM, 17,18 ion backscattering, 19 as well as milling. 20 However, while SRIM can provide insight into the behavior of energetic ions interacting with the target, it lacks the ability to simulate two features critical to the HIM: secondary electron (SE) production and thus image formation, and cumulative sputtering necessary to understand the surface sputtering profiles during milling.…”

Section: Monte Carlo Simulationsmentioning

confidence: 99%

Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams

Stanford

Lewis

Mahady

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Focused ion beam nanoscale synthesis has emerged as a critical tool for selected area nanofabrication. Helium and neon ion beams from the gas field ion source have recently demonstrated unparalleled resolution among other scanning ion beams. In this review, the authors focus on the nanoscale synthesis applications for these ion species which have been demonstrated to date. The applications and recent work can broadly be grouped into the following categories: (1) Monte Carlo simulations, (2) direct-write milling or sputtering, (3) ion beam lithography, (4) selective ion implantation or defect introduction, and (5) gas-assisted processing. A special emphasis is given toward using He þ and Ne þ for the processing of two dimensional materials, as several groups have demonstrated promising results. Finally, the authors will discuss the future outlook of He þ and Ne þ nanoprocessing techniques and applications.

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Helium ion microscope invasiveness and imaging study for semiconductor applications

Abstract: Articles you may be interested inFocused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Cited by 27 publications

References 8 publications

SEM characterization of silicon nanostructures: can we meet the challenge?

SEM characterization of silicon nanostructures: can we meet the challenge?

E-beam invasiveness on 65 nm complementary metal-oxide semiconductor circuitry

Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams

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