Increasing the efficiency of spin-orbit torque (SOT) is of great interest in spintronics devices because of its application to the non-volatile magnetic random access memory and in-logic memory devices. Accordingly, there are several studies to alter the magnetic properties and reduce the SOT switching current with Helium ion irradiation, but previous researches are focused on its quantitative changes only. Here, the authors observe the reduction of switching current and analyze the origins of Helium ion irradiation induced SOT switching current reduction. The first is from improved spin Hall angle caused by the resistivity change of heavy metal layer and second is from the reduction of surface anisotropy energy at interface between heavy metal and ferromagnet. The result shows that switching current is reduced about ~30.3% at dose of 30 ions/nm2 and relevant parameter change is shown as improved spin Hall angle from 0.096 to 0.132 and reduced anisotropy field from 13.7 to 8.5 kOe. Altogether, the power consumption ratio is calculated based on the derived parameter and result shows that requiring power reaches only 56.0% at 30 ions/nm2. This analysis suggests that more efficient SOT device engineering is possible by Helium ion irradiation.