Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

Abstract

Enhanced radiation tolerance in nitride multilayered nanofilms with small period-thicknesses Appl. Phys. Lett. 101, 153117 (2012) Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO3 thin films J. Appl. Phys. 112, 073718 (2012) Kinetics of color center formation in silica irradiated with swift heavy ions: Thresholding and formation efficiency Appl. Phys. Lett. 101, 154103 (2012) Fabricating high-density magnetic storage elements by low-dose ion beam irradiation Appl. Phys. Lett. 101, 112406 (2012) Determination of ion track radii in amorphous matrices via formation of nano-clusters by ion-beam irradiation Appl. Phys. Lett. 101, 103112 (2012) Additional information on J. Appl. Phys. Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin (%55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiationinduced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stressrelated viscoelastic flow being the dominant mechanisms of dimensional change. V C 2012 American Institute of Physics. [http://dx

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

“…Bubbling has been documented previously, especially in studies involving helium irradiation effects on silicon and silica substrates. 40,58 It it clear from these micrographs that helium, under these conditions, is not viable for nickel etching.…”

“…For doses higher than $5 Â 10 16 He þ /cm 2 , helium is no longer soluble and the formation of subsurface nanobubbles is visible in transmission electron microscopy (TEM). 34,40 These subsurface processes induce a measurable swelling in Si and Cu.…”

In Situ Mitigation of Subsurface and Peripheral Focused Ion Beam Damage via Simultaneous Pulsed Laser Heating

“…Conveniently, the He + /Si system is well‐studied as cavities formed via He + implantation can getter metal impurities in silicon and extend the lifetime of semiconductor junctions . Nanobubble formation and the subsequent cavity formation for post‐implantation annealed He/silicon has been well‐documented and shown to be a complex interaction of the generated vacancies and implanted helium ion distributions . The measurements and modeling of He and H implantation defect formation and temperature‐dependent recovery/diffusion has been recently reviewed in detail .…”

Hydrophilicity Improvement of Polymer Surfaces Induced by Simultaneous Nuclear Transmutation and Oxidation Effects Using High-Energy and Low-Fluence Helium Ion Beam Irradiation

“…Various materials, such as metal (e.g., tungsten, iron, nickel, and alloys), carbon (e.g., diamond [12] and graphene [13]), semiconductors (e.g., silicon [14,15], lead halide [16]), and composites, have been irradiated by low-energy high-fluence He ions to alter their surface properties. Among these, a number of studies have conducted He ion irradiation with polymers as the target material.…”