Hetero-device complementary resistive switches with high switch speed and reliability for cross point array applications

Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point

“…23) Recently, the crossbar architecture with different switching materials is the most promising candidate owing to its high density, high scalability potential, high nonvolatility, inherent 4F 2 cell size, three-dimensional (3D) integration for mass storage devices, and simplicity in fabrication. [24][25][26][27][28][29] Formation-free crossbar resistive switching memory devices fabricated using the Pt/Ti/Al 2 O 3 /Al structure with a resistance ratio of <10 at an I CC of 500 A have already been reported. 30) However, formationfree cross-point devices fabricated using a simple stack of iridium oxide (IrO x )/AlO x /W with superior memory performance at a very low current of 50 A have not been reported yet.…”