2014
DOI: 10.1063/1.4878304
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Hetero-structure p-i-n solar cell with high efficiency

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Cited by 2 publications
(3 citation statements)
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“…The p-i-n junction has opened up considerable opportunities in the fields of photodetectors, photoelectric devices, , and solar cells due to its exclusive properties. The p-i-n junction is transformed from the p-n junction, where an intrinsic/insulating layer (i-layer) is inserted between the n-type semiconductor region and the p-type semiconductor region.…”
Section: Introductionmentioning
confidence: 99%
“…The p-i-n junction has opened up considerable opportunities in the fields of photodetectors, photoelectric devices, , and solar cells due to its exclusive properties. The p-i-n junction is transformed from the p-n junction, where an intrinsic/insulating layer (i-layer) is inserted between the n-type semiconductor region and the p-type semiconductor region.…”
Section: Introductionmentioning
confidence: 99%
“…For this reason, higher band gap materials are said to generate less heat. Successful usage of various energy gaps was demonstrated in multijunction cascade solar cell structure with tunnel junction [4] and, more recently, in design of AlGaAs/GaAs cascade structure [5]. It has been proved that large band gaps improve the cell efficiency at higher temperature due to smaller temperature coefficients for reverse saturation current (dark current).…”
Section: Introductionmentioning
confidence: 99%
“…We use thermodynamic modeling in predicting the temperature rise in AlGaAs/AlGaAs/GaAs cascade p-i-n structure [5] under solar irradiance of AM1.5. We propose a model based on quantization and continuity equation to calculate photocurrent for a superlattice structure.…”
Section: Introductionmentioning
confidence: 99%