Heteroepitaxial growth of Cu3N thin films

Terada, S.; Tanaka, Hiroyuki; Kubota, K.

doi:10.1016/0022-0248(89)90038-9

Cited by 60 publications

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“…Since the pioneer work by Terada et al 1 different methods have been applied to grow films with reasonable quality: molecular beam epitaxy, 2 atomic layer deposition, 3 pulsed laser deposition, 4,5 dc-triode sputtering, 6,7 and mostly rfmagnetron sputtering. [8][9][10][11][12][13][14] Copper nitride decomposes at relatively low temperature into metallic copper and nitrogen.…”

Section: Introductionmentioning

confidence: 99%

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300°C. Films were characterized by means of ion-beam analysis ͑IBMA͒, X-ray diffraction ͑XRD͒, atomic force microscopy ͑AFM͒, and spectroscopic ellipsometry techniques ͑SE͒. The data reveal that even when the total ͑integrated over the whole thickness͒ atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100°C. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO 3 crystal lattice forming a solid solution. The influence of nitrogen migration on the optical ͑electronic͒ properties of the films will be discussed.

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Section: Introductionmentioning

confidence: 99%

Thermal stability of copper nitride thin films: The role of nitrogen migration

González-Arrabal

Gordillo

Martín‐González³

et al. 2010

Journal of Applied Physics

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“…Since the 1980s, the Cu 3 N film has attracted more and more attention due to its possible application prospects as an optical storage compound. Several groups obtained Cu 3 N films through different methods, including reactive sputtering [4], radio-frequency (rf) magnetron sputtering [5,[8][9][10], molecular-beam epitaxy [11,12], heteroepitaxial growth [13], ion-assisted vapor deposition [14], etc. Since the lattice mismatch as well as the different thermal expansion coefficient between the thin film and the substrate always leads to strain, it is important to learn how pressure will affect the structure and consequently the physical behaviors of this functional material.…”

Section: Introductionmentioning

confidence: 99%

Pressure‐induced metallization and structural evolution of Cu₃N

Zhao

Yang

et al. 2006

Physica Status Solidi (b)

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In situ resistance evolution with pressure of anti-perovskite nitride Cu 3 N was measured using the diamond anvil cell (DAC) technique up to 20.0 GPa at room temperature. A sharp drop of resistance from 105 Ω at ambient pressure to several Ω was observed in the range 3.0 -10.0 GPa. This is an indication of the pressure-induced metallization in the Cu 3 N semiconductor. Meanwhile we also performed the high-pressure energy dispersive X-ray diffraction experiments on Cu 3 N at the pressures up to 39.2 GPa. It was found that a crystal structure phase transition begins to take place at ~5.0 GPa on Cu 3 N, which is generally consistent with the electronic conductance results.

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“…In spite of the promising properties of Cu 3 N, the large discrepancies reported in literature about its measured physical properties have hampered the implementation of reliable technological devices. As an example, the electric conductivity has been reported to range from a quasi-metallic [7][8][9][10][11][12] (10 3 fl _1 cm"') to a semiconducting behavior [13][14][15][16][17] (10 _3 fl _1 cm -1 ) and the optical energy gap values cover a wide range [15][16][17][18][19] (0.9-1.9 eV). This dispersion of data could be mostly attributed to differences in the stoichiometry of the films, which in most works has not been appropriately characterized.…”

Section: Introductionmentioning

confidence: 99%

“…Cu 3 N is an intrinsic metastable semiconductor presenting an open cubic anti-Re0 3 ( Fig. la) crystal structure [10,[15][16][17]23], which is quite suited for the incorporation of other elements such as Cu, N, Ag and Pd in the interstices of the unit cell. Although some information is available [11,24] on the effect of Cu-doping on Cu 3 N, the situation concerning N-doping is less clear.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of copper nitrides as a function of nitrogen content

et al. 2013

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The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26 ± 2 to 33 ± 2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu 3 N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from -5 to -50 uV/K in the Seebeck coefficient and to large enhancements, from 10~3 up to 10 O cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.

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Heteroepitaxial growth of Cu3N thin films

Cited by 60 publications

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Thermal stability of copper nitride thin films: The role of nitrogen migration

Thermal stability of copper nitride thin films: The role of nitrogen migration

Pressure‐induced metallization and structural evolution of Cu₃N

Electronic structure of copper nitrides as a function of nitrogen content

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Heteroepitaxial growth of Cu3N thin films

Cited by 60 publications

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Thermal stability of copper nitride thin films: The role of nitrogen migration

Thermal stability of copper nitride thin films: The role of nitrogen migration

Pressure‐induced metallization and structural evolution of Cu3N

Electronic structure of copper nitrides as a function of nitrogen content

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Pressure‐induced metallization and structural evolution of Cu₃N