Heteroepitaxial growth of diamond on c-BN in a microwave plasma

Maeda, Hideaki; Masuda, S.; Kusakabe, Katsuki; Morooka, Shigeharu

doi:10.1016/0925-9635(94)90192-9

Cited by 20 publications

(4 citation statements)

References 20 publications

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“…The right substrate should have a combination of different important parameters, such as an appropriate lattice constant, the stability of the substrate under plasma conditions, and many others [ 11 ]. A number of materials, such as Si [ 122 ], SiC [ 123 ], Ir [ 124 ], Co [ 125 ], c-BN [ 126 ], Re [ 127 ], Al 2 O 3 [ 128 ], Pt [ 129 ], Ni [ 130 ], and TiC [ 131 ], have been explored for diamond heteroepitaxy growth. Iridium was used as a buffer layer on top of the metal oxide layers on Si substrates to reduce the cost and produce larger substrates [ 132 , 133 ].…”

Section: Materials Quality and Growth Techniquesmentioning

confidence: 99%

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

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Section: Materials Quality and Growth Techniquesmentioning

confidence: 99%

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Hasan,

Wang,

Pala

et al. 2024

Nanomaterials

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“…A large variety of materials have been tested and used for diamond heteroepitaxy: Si, [ 102 ] SiC, [ 103 ] TiC, [ 104 ] Co, [ 105 ] Pt, [ 106 ] Ir, [ 107 ] c‐BN, [ 108 ] Al 2 O 3 , [ 109 ] Ni, [ 110 ] and Re. [ 111 ] The formation of a continuous film requires the presence of a sufficiently high density of nuclei and the quality of the film is intimately linked to the disorientation of the nuclei.…”

Section: State Of the Artmentioning

confidence: 99%

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

Arnault

Saada

Ralchenko

2021

Physica Rapid Research Ltrs

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With its outstanding physical properties, single‐crystal diamond is the material of choice for future power electronics and quantum devices. The later application field is based on the optical and spin properties of color centers hosted in diamond lattice. Two synthesis methods are currently developed to grow high‐quality diamond: high pressure and high temperature (HPHT) synthesis and chemical vapor deposition (CVD). Herein, the state of the art of single‐crystal diamond growth by CVD, either starting with diamond substrate (homoepitaxy) or controlling diamond epitaxial nucleation on a foreign substrate (heteroepitaxy) is described. Progress on substrates, dislocation propagation, and reduction of structural defects, doping, upscaling, and applications are reviewed. In light of recent progress, future challenges and the respective roles of homoepitaxial and heteroepitaxial materials in the applications roadmap are discussed.

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“…[1][2][3][4][5] Local epitaxy has been reported on Ni, Cu, Si, and 6H-SiC. It would be a great advantage if diamond could be deposited in heteroepitaxy with substrate.…”

Section: Introductionmentioning

confidence: 99%

Direct observations of heteroepitaxial diamond on a silicon(110) substrate by microwave plasma chemical vapor deposition

Chen

Chang²,

Lin

et al. 1996

J. Mater. Res.

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Heteroepitaxial diamond has been successfully deposited on a Si(110) substrate by the microwave plasma chemical vapor deposition method. The pretreatment consisted of carburization and bias-enhanced nucleation steps. Cross-sectional transmission electron microscopy reveals that diamond can be in the cube-on-cube epitaxial relationship with the Si substrate. Various orientation relationships between diamond and Si substrates have also been observed, depending on the location where the plasma applied. Near the center of the plasma, twins were rarely observed in cube-on-cube epitaxial regions. Away from the center of the plasma ball, S3 twins are seen first, and then additional S9 and S27 twins occur near the edge of the plasma. In general, defect density in the epitaxial films is less than that observed in polycrystalline ones. No interlayer could be observed between diamond and silicon. In addition, 2H-type hexagonal diamond has also been found, and is in epitaxy with the Si substrate.

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Heteroepitaxial growth of diamond on c-BN in a microwave plasma

Cited by 20 publications

References 20 publications

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

Direct observations of heteroepitaxial diamond on a silicon(110) substrate by microwave plasma chemical vapor deposition

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