Heteroepitaxy of copper on sapphire under uhv conditions

Bialas, H.; Knoll, E.

doi:10.1016/0042-207x(94)90220-8

Cited by 27 publications

(17 citation statements)

References 17 publications

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“…Rather, the metallic grains may develop a number of orientation relationships (ORs) with the substrate. The same ORs on the c-plane of sapphire have been found for Al, Cu, Ni and Pt, in the form either of polycrystalline films annealed after deposition, or of crystallites produced by solid-state dewetting of the films [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The large atomic lattice mismatch between sapphire and these metals rules out the possibility that a coherent interface will develop in order to minimize the interfacial strain energy.…”

Section: Introductionsupporting

confidence: 53%

“…It is also instructive to examine the ORs of metallic fcc films on other sapphire substrate orientations, and in particular on the most widely studied (0 0 0 1) c-plane of sapphire, in the framework of interfacial steps. Most of the papers [1][2][3][4][5][6][7][8][9][10][11][12][13][14] report a preferred OR1c: Me(1 1 1)[1 1 0]//α-Al 2 O 3 (0 0 0 1)[1 1 0 0], where Me = Al, Cu, Ni or Pt. However, when samples are prepared at high temperature (by sintering for Cu [8], or annealing for Al films [1]), another OR, OR2c, becomes preferred.…”

Section: Possible Origin Of the Orientation Relationshipsmentioning

confidence: 99%

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Growth and orientation relationships of Ni and Cu films annealed on slightly miscut (11¯02) r-sapphire substrates

Chatain

Courtois

Ozerov

et al. 2019

Journal of Crystal Growth

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Nano-crystalline Ni and Cu films deposited on the r-plane of sapphire (α-Al 2 O 3) develop a 〈1 1 1〉 fiber-texture upon annealing, in which grains grow up to 300 to 500 times larger than the film thickness. Most of the largest grains, which have grown at the expense of others, display one of four preferred orientation relationships (ORs) to the substrate. The four preferred ORs are OR1r = Me(1 1 1)[1 1 0]//α-Al 2 O 3 (1 1 0 2)[1 1 2 0], OR2r = Me(1 1 1)[1 1 0]//α-Al 2 O 3 (1 1 0 2)[1 1 0 1] (Me = Ni or Cu), and their twins, which are rotated 60°about the 〈1 1 1〉 axis perpendicular to the substrate. For these ORs, one of the densest 〈1 1 0〉 atomic rows that lies within the Me {1 1 1} interfacial plane, aligns with the direction of the step edges that form at the intersection of the r-plane with one of its neighboring facets on the equilibrium shape of sapphire (i.e. the c-(0 0 0 1), p-{1 1 2 3} or s{1 0 1 1}-planes). One of the ORs is most preferred when the steps at the interface are such that a {1 0 0}-type ledge of the Me {1 1 1} interfacial plane faces the ledge of the sapphire step. This observation provides a useful insight into the origin of the preferred ORs, and confirms the important role of surface steps in texture development. The evolution of Ni films of different thicknesses, ranging from 100 to 560 nm, was analyzed. Grain boundary grooving inhibits grain boundary motion and favors hole formation and dewetting in the thinnest films (100 nm). The crystals left behind after dewetting display ORs which may differ from the preferred ones. Large grains with the preferred ORs can grow at the expense of others when the film thickness is greater than 300 nm.

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Section: Introductionsupporting

confidence: 53%

Section: Possible Origin Of the Orientation Relationshipsmentioning

confidence: 99%

Growth and orientation relationships of Ni and Cu films annealed on slightly miscut (11¯02) r-sapphire substrates

Chatain

Courtois

Ozerov

et al. 2019

Journal of Crystal Growth

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“…Therefore, it is important to investigate a crystalline metal film as catalyst for well defined graphene synthesis. One possible approach is to use an epitaxial metal film deposited on a single‐crystalline substrate, such as sapphire (α‐Al 2 O 3 ) and single‐crystal MgO 29–31. These crystalline substrates are widely used and less expensive and larger wafers are commercially available compared with the single‐crystal metal substrates.…”

Section: Introductionmentioning

confidence: 99%

Patterned Growth of Graphene over Epitaxial Catalyst

Ago

Tanaka

Orofeo

et al. 2010

Small

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Rectangle- and triangle-shaped microscale graphene films are grown on epitaxial Co films deposited on single-crystal MgO substrates with (001) and (111) planes, respectively. A thin film of Co or Ni metal is epitaxially deposited on a MgO substrate by sputtering while heating the substrate. Thermal decomposition of polystyrene over this epitaxial metal film in vacuum gives rectangular or triangular pit structures whose orientation and shape are strongly dependent on the crystallographic orientation of the MgO substrate. Raman mapping measurements indicate preferential formation of few-layer graphene films inside these pits. The rectangular graphene films are transferred onto a SiO(2)/Si substrate while maintaining the original shape and field-effect transistors are fabricated using the transferred films. These findings on the formation of rectangular/triangular graphene give new insights on the formation mechanism of graphene and can be applied for more advanced/controlled graphene growth.

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“…Note that the (111) orientation of these metallic antiferromagnetic alloys is the preferred orientation as it typically provides the largest exchange bias values. The epitaxy of metals on sapphire, particularly in the (111) orientation on c-axis sapphire ͓Al 2 O 3 ͑0001͔͒ has been studied for decades, [46][47][48][49][50] although the details of the interfacial bonding between deposited metal atoms and the underlying oxide substrate is sufficiently complex that new aspects of the behavior are still being revealed. 51 Essentially, epitaxial growth is possible but it typically occurs in the VolmerWeber growth mode where 3D islands nucleate and eventually coalesce at a certain mean thickness value.…”

Section: Performancementioning

confidence: 99%

Design and performance of a molecular beam epitaxy system for metallic heterostructure deposition illustrated by a study of the controlled epitaxy of Cu(111)∕Al2O3(0001)

Lund

Leighton

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We describe the design and construction of an ultrahigh-vacuum molecular beam epitaxy (MBE) system for the growth of metallic heterostructures, particularly magnetic metals, and alloys. The system, which was specifically designed to be both cost-effective and compact, incorporates an “axial” design with a large source to substrate distance (>69cm) to meet demands for high uniformity, low deposition rate, and compatibility with nanolithographic masks and templates. The growth and in situ characterization capabilities are specifically tailored to metallic film growth allowing for greatly reduced costs in comparison to commercial MBE systems. We demonstrate the performance of the system via a study of the controlled epitaxy of Cu(111) on Al2O3(0001), a useful substrate/buffer layer combination for the growth of many magnetic transition metals and their alloys. Exploiting the three-dimensional nature of the growth at room temperature we are able to control the in-plane crystallite size, independent of the surface roughness, by varying the deposition rate.

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Heteroepitaxy of copper on sapphire under uhv conditions

Cited by 27 publications

References 17 publications

Growth and orientation relationships of Ni and Cu films annealed on slightly miscut (11¯02) r-sapphire substrates

Growth and orientation relationships of Ni and Cu films annealed on slightly miscut (11¯02) r-sapphire substrates

Patterned Growth of Graphene over Epitaxial Catalyst

Design and performance of a molecular beam epitaxy system for metallic heterostructure deposition illustrated by a study of the controlled epitaxy of Cu(111)∕Al2O3(0001)

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