Patterned Growth of Graphene over Epitaxial Catalyst

Ago, Hiroki; Tanaka, Izumi; Orofeo, Carlo M.; Tsuji, Masaharu; Ikeda, Ken

doi:10.1002/smll.200902405

Cited by 46 publications

(41 citation statements)

References 40 publications

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“…We start the process by preparing the metal substrate (Co or Ni). Recently, we have found a way to create highly crystalline metal films after sputtering on single crystalline MgO and c-plane sapphire substrates [17,18]. Figure 1(a) illustrates the metal arrangement.…”

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confidence: 98%

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Synthesis of large area, homogeneous, single layer graphene films by annealing amorphous carbon on Co and Ni

Orofeo

Ago

et al. 2011

Nano Res.

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The synthesis of large area, homogenous, single layer graphene on cobalt (Co) and nickel (Ni) is reported. The process involves vacuum annealing of sputtered amorphous carbon (a-C) deposited on Co/sapphire or Ni/sapphire substrates. The improved crystallinity of the metal film, assisted by the sapphire substrate, proves to be the key to the quality of as-grown graphene film. The crystallinity of the Co and Ni metal films was improved by sputtering the metal at elevated temperature as was verified by X-ray diffraction (XRD). After sputtering of a-C and annealing, large area, single layer graphene that occupies almost the entire area of the substrate was produced. With this method, 100 mm 2 -area single layer graphene can be synthesized and is limited only by the substrate and vacuum chamber size. The homogeneity of the graphene film is not dependent on the cooling rate, in contrast to syntheses using polycrystalline metal films and conventional chemical vapor deposition (CVD) growth. Our facile method of producing single layer graphene on Co and Ni metal films should lead to large scale graphene-based applications.

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confidence: 98%

“…To facilitate the transfer, a protective layer of polymethyl methacrylate (PMMA, Aldrich Chemicals) was spin coated onto the graphene-metal substrate [17,18]. The PMMA/graphene can be detached from the metal by wet-etching using FeCl 3 solution, after which it can easily be transferred onto the SiO 2 /Si substrate ( Fig.…”

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confidence: 99%

Synthesis of large area, homogeneous, single layer graphene films by annealing amorphous carbon on Co and Ni

Orofeo

Ago

et al. 2011

Nano Res.

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“…[6][7][8][9] It is therefore very desirable to develop effective methods for preparing large scale graphene films to enable their potential use in a broad range of applications. Recent advances in CVD synthesis of graphene have provided useful information on the nucleation and growth mechanism of graphene, [8][9][10][11][12][13][14][15][16] especially the graphene/metal (e.g. nickel, copper) systems.…”

Section: Graphenementioning

confidence: 99%

“…9 Another effort is focused on elucidating the growth mechanism of graphene in order to find ways to suppress random nucleation and induce single nucleus. However, in spite of intensive research, [10][11][12][13][14][15][16] the lack of a deep understanding in the nucleation mechanisms has become a major hurdle in achieving large-area and device quality single crystalline graphene.…”

Section: Graphenementioning

confidence: 99%

Step driven competitive epitaxial and self-limited growth of graphene on copper surface

Fan

et al. 2011

AIP Advances

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The existence of surface steps was found to have significant function and influence on the growth of graphene on copper via chemical vapor deposition. The two typical growth modes involved were found to be influenced by the step morphologies on copper surface, which led to our proposed step driven competitive growth mechanism. We also discovered a protective role of graphene in preserving steps on copper surface. Our results showed that wide and high steps promoted epitaxial growth and yielded multilayer graphene domains with regular shape, while dense and low steps favored self-limited growth and led to large-area monolayer graphene films. We have demonstrated that controllable growth of graphene domains of specific shape and large-area continuous graphene films are feasible

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“…above the Ni grain boundaries) [15][16][17]. Therefore, a solution to this problem can be the use of single crystal nickel (sc-Ni) without GBs as a substrate to avoid inhomogeneous carbon precipitation and formation of concomitant carbon deposits [15,[18][19][20][21]. A very small lattice misfit (1.3%) exists between Ni [111] and graphene, so an epitaxial growth is anticipated and growth of graphene without GBs seems to be possible.…”

Section: Introductionmentioning

confidence: 99%