Heteroepitaxy of GaAsP and GaP on GaAs and Si by low pressure hydride vapor phase epitaxy

Strömberg, Axel; Omanakuttan, Giriprasanth; Liu, Yingjun; Mu, Tangjie; Xu, Zhehan; Lourdudoss, Sebastian; Sun, Yan-Ting

doi:10.1016/j.jcrysgro.2020.125623

Cited by 11 publications

(11 citation statements)

References 40 publications

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“…[10][11][12][13] Epitaxial growth of semiconductor materials is a well-established manufacturing method, but it is also well known for introducing edge misfit and screw threading dislocations. [14][15][16] Processes such as, wafer bonding, [17] chemical etching, and e-beam lithography, [18] can also have detrimental effects on the crystal structure of semiconductor materials. The relationship between lattice strain, residual stress, and defects is fundamental since they are closely connected to each other.…”

Section: Doi: 101002/smtd202100932mentioning

confidence: 99%

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

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The reliability of semiconductor materials with electrical and optical properties are connected to their structures. The elastic strain field and tilt analysis of the crystal lattice, detectable by the variation in position and shape of the diffraction peaks, is used to quantify defects and investigate their mobility. The exploitation of high‐resolution X‐ray diffraction‐based methods for the evaluation of structural defects in semiconductor materials and devices is reviewed. An efficient and non‐destructive characterization is possible for structural parameters such as, lattice strain and tilt, layer composition and thickness, lattice mismatch, and dislocation density. The description of specific experimental diffraction geometries and scanning methods is provided. Today's X‐ray diffraction based methods are evaluated and compared, also with respect to their applicability limits. The goal is to understand the close relationship between lattice strain and structural defects. For different material systems, the appropriate analytical methods are highlighted.

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Section: Doi: 101002/smtd202100932mentioning

confidence: 99%

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

et al. 2021

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“…Espinosa-Vega et al [ 25 ] noted that small changes of Raman modes indicate the perfection of GaAs structures. The ratio of phonons could be an indicator of GaAs structural composition [ 26 ].…”

Section: Resultsmentioning

confidence: 99%

Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination

et al. 2021

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This work is dedicated to the description of the degradation of GaAs solar cells under continuous laser irradiation. Constant and strong exposure of the solar cell was performed over two months. Time-dependent electrical characteristics are presented. The structure of the solar cells was studied at the first and last stages of degradation test. The data from Raman spectroscopy, reflectometry, and secondary ion mass spectrometry confirm displacement of titanium and aluminum atoms. X-ray photoelectron spectroscopy showed a slight redistribution of oxygen bonds in the anti-corrosion coating.

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“…Note also that these pits appear on both patterned and unpatterned surfaces on binary and ternary materials, which means they are not correlated to the pattern deposition or to the chemical composition. Although some authors associate the appearance of these pits with the polarity of the inverted layer, we are more inclined to believe that in the case of heteroepitaxy, including GaAs x P 1‐ x ternaries, the pits’ appearance is due to rather the initial exposure of the substrate or template surface to the non‐native precursor, PH 3 , AsH 3 , or their mixture [ 24,25 ] .…”

Section: Resultsmentioning

confidence: 99%

“…The idea to grow GaAs x P 1‐ x ternaries, discussed in more detail in this work, came from our belief that the growth of a ternary should be a more favorable heteroepitaxial case than the growth of one binary material on another, and the possibility to obtain a material with lower 2PA than GaAs but with higher nonlinear susceptibility than GaP. Both ideas, heteroepitaxy and ternaries, are now being explored by several groups in the United States [ 22–24 ] and Europe [ 25,26 ] to obtain large enough optical apertures by thick growth on OP templates. Before proving frequency conversion in heteroepitaxially grown materials, including ternaries, however, one should bear in mind that the birefringence stress due to lattice and thermal mismatch during heteroepitaxy or the refractive index inhomogeneity could be new problems to think of.…”

Section: Introductionmentioning

confidence: 99%

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

Tassev

Vangala

Brinegar

et al. 2020

Physica Status Solidi (a)

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Thick hydride vapor phase heteroepitaxy of some III–V, II–VI, and III–VI binary and ternary semiconductor materials such as GaAs, GaP, GaP, GaAsxP1‐x, ZnSe, and GaSe is performed on GaAs substrates and orientation‐patterned GaAs templates. Up to 500 μm thick GaAs, GaP, GaP, GaAsxP1‐x, and ZnSe layers are deposited in single growths or after a regrowth. The GaSe layers deposited through van der Waals heteroepitaxy are up to 4–5 μm thick. When possible, growths are also performed homoepitaxially as the comparison of growth rate and layer quality indicates similar or better results in some of the heteroepitaxial cases. Material analysis using optical microscopy, scanning electron microscopy, atomic force microscopy, high‐resolution X‐ray diffraction, and energy dispersive X‐ray spectroscopy indicate smooth surface morphology, uniform layer thicknesses, high crystalline quality, and gradual substrate‐to‐layer material transition in the cases of heteroepitaxy. Respectively, the growths on the templates prepared by an optimized polarity inversion technique (assisted by molecular‐beam epitaxy) reveal excellent domain fidelity and good infrared transparency. The samples grown on templates are intended for frequency conversion devices operating in mid and longwave infrared. The layers grown on plain substrates are meant to support applications in optoelectronics, renewable energy, sensing, and solar cells.

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Heteroepitaxy of GaAsP and GaP on GaAs and Si by low pressure hydride vapor phase epitaxy

Cited by 11 publications

References 40 publications

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects

Characterization of GaAs Solar Cells under Supercontinuum Long-Time Illumination

Thick Heteroepitaxy of Binary and Ternary Semiconductor Materials for Nonlinear Frequency Conversion in the Mid and Longwave Infrared Region

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