Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Abstract

This paper presents the heteroepitaxial growth of ultrawide bandgap b-Ga 2 O 3 thin films on c-plane sapphire substrates by low pressure chemical vapor deposition. N-type conductivity in silicon (Si)doped b-Ga 2 O 3 films grown on sapphire substrate is demonstrated. The thin films were synthesized using high purity metallic gallium (Ga) and oxygen (O 2) as precursors. The morphology, crystal quality, and properties of the as-grown thin films were characterized and analyzed by field emission scanning electron microscopy, X-ray diffraction, electron backscatter diffraction, photoluminescence and optical, photoluminescence excitation spectroscopy, and temperature dependent van der Pauw/Hall measurement. The optical bandgap is $4.76 eV, and room temperature electron mobility of 42.35 cm 2 /V s was measured for a Si-doped heteroepitaxial b-Ga 2 O 3 film with a doping concentration of 1.32 Â 10 18 cm À3 .

Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

“…https://doi.org/10.1063/1.5027763 Gallium oxide (Ga 2 O 3 ) is an emerging candidate for the applications of solar blind photodetectors, high power transistors due to its ultra-large band gap of 4.8 eV, high breakdown field, high electron saturation velocity, and high hardness irradiation. [1][2][3][4][5] To further exploit the potential of Ga 2 O 3 material, bandgap engineering of (Al x Ga 1Àx ) 2 O 3 and heterostructure designs are on demand. Bandgap tunability of (Al x Ga 1Àx ) 2 O 3 alloying up to above 6 eV enables to develop vacuum ultraviolet (VUV) super-radiation hard detectors.…”

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

“…There is significant promise in β-Ga 2 O 3 for use in electronics for extreme environments (high temperature, high radiation and high voltage switching) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] and for solar blind UV detection. 16 Ga 2 O 3 is suited to these applications because of its wide bandgap, ∼4.8 eV and high theoretical critical field strength ∼8 MV/cm (experimental values have reached 3.8 MV/cm).…”

“…13 Ga 2 O 3 bulk and epitaxial crystals can be grown by many methods including Czochralski, edge-defined film-fed growth (EFG), Verneuil, float-zone, molecular beam epitaxy (MBE), halide vapor phase epitaxy growth (HVPE), with excellent control of quality and n-type conductivity. 1,2,14,15,17 The β-phase of Ga 2 O 3 has a monoclinic structure and is the most commonly studied of the different polymorphs. 1,2,[18][19][20][21] Excellent results for β-Ga 2 O 3 -based power rectifiers, field effect transistors (FETs) and metal-oxide FETs (MOSFETs) have been reported, 2,4-13 along with solar blind photodetectors.…”

Thermal annealing effect on β-Ga2 O3 thin film solar blind photodetector heteroepitaxially grown on sapphire substrate

“…In this article, β‐Ga 2 O 3 thin films were synthesized on a c‐plane sapphire substrate by LPCVD. The details of the growth process were reported elsewhere . The thin films were annealed ex situ in oxygen at 1000 °C for 1 hr.…”