2011
DOI: 10.1109/ted.2010.2102357
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Heterogeneous Chip Integration Process for Flexible Wireless Microsystem Application

Abstract: Abstract-This paper presents a low-cost heterogeneous integration technology combining the previously developed bumpless radio-frequency (RF) system-on-a-package scheme with a special surface cleaning process to assemble a complementary metal-oxide-semiconductor chip with an organic substrate (SU-8/ polydimethylsiloxane) by low-temperature Au-Au thermocompressive bonds (< 200• C) for flexible wireless microsystem fabrication. The RF performance of −15 dB return loss and −0.25 dB insertion loss at 40 GHz and ab… Show more

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Cited by 9 publications
(6 citation statements)
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“…91 SU-8 is a flexible polymer usually attached to PDMS substrate in flexible electronic systems as a photo-resist and it is comparatively easier to handle at wafer levels. 92 Kapton polyamide exhibits low dielectric loss, greater thermal stability 89 and an ultimate tensile strength of 231 MPa. 85 Conventionally, thin copper foils are used as flexible conducting material, 93 but they are not stretchable.…”
Section: Flexible and Stretchable Materialsmentioning
confidence: 99%
“…91 SU-8 is a flexible polymer usually attached to PDMS substrate in flexible electronic systems as a photo-resist and it is comparatively easier to handle at wafer levels. 92 Kapton polyamide exhibits low dielectric loss, greater thermal stability 89 and an ultimate tensile strength of 231 MPa. 85 Conventionally, thin copper foils are used as flexible conducting material, 93 but they are not stretchable.…”
Section: Flexible and Stretchable Materialsmentioning
confidence: 99%
“…Instead of SOI wafers, two silicon substrates bonded using the SU-8 can enable a more flexible design including low parasitic substrate capacitance and low manufacturing cost. Chao et al 15 presented a low-cost heterogeneous integration technology to assemble a CMOS chip with an organic substrate (SU-8/PDMS) using low temperature Au-Au thermocompressive bonds (o200 1C) for flexible wireless microsystem fabrication. À15 dB return loss and À0.25 dB insertion loss @ 40 GHz of a microstrip-tocoplanar waveguide interconnect transition between CMOS chip and SU-8 substrate was also successfully developed for the application.…”
Section: Microfabrication Processesmentioning
confidence: 99%
“…The cleanness of bonding surface has been verified as a key process parameter to lower the metal-metal bonding temperature. Therefore, a surface cleaning treatment using a mixture of H 2 SO 4 and H 2 O 2 for 180 seconds is adopted to effectively remove organic contamination from the Au pad surfaces for following bonding [11]. Once both surfaces of the CMOS chip and SU-8 substrate are cleaned, the CMOS chip is flip-chip bonded to the SU-8 substrate at the conditions of 180°C, which is lower than the glass transition temperature of fully cured SU-8, and 100MPa applied pressure for 3 minutes.…”
Section: B a Low Temperatre Au-au Thermocompressive Bondingmentioning
confidence: 99%
“…Via a wafer-level sacrificial release process for the SU-8 spiral ribbon fabrication and the previously developed low temperature bumpless Au-Au thermocompressive (TC) bonding process [10,11], a low cost and reliable heterogeneous integration of biomedical microsystems, such as a Si neural probing system interfaced with a system-on-package (SOP) circuits, can be truly realized.…”
Section: Introductionmentioning
confidence: 99%