2012
DOI: 10.1021/nn304784y
|View full text |Cite
|
Sign up to set email alerts
|

Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement

Abstract: We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In(x)Ga(1-x)As nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In(x)Ga(1-x)As (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybr… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
28
0

Year Published

2013
2013
2016
2016

Publication Types

Select...
10

Relationship

2
8

Authors

Journals

citations
Cited by 42 publications
(28 citation statements)
references
References 24 publications
0
28
0
Order By: Relevance
“…FDTD simulations show broadband absorption enhancement owing to scattering and a doubling in absorption around the wavelength of 665 nm, which is the resonant frequency for the coupled whispering gallery mode. Shin and colleagues heterogeneously integrated p + + -doped InGaAs nanowires on the rear side of a silicon solar cell via catalyst-free MOCVD growth [ 64 ]. The rest of the rear surface of the silicon was passivated with a nitride layer and the nanowires were surrounded by a metal backreflector and rear contact.…”
Section: Gratings and Surface Structuresmentioning
confidence: 99%
“…FDTD simulations show broadband absorption enhancement owing to scattering and a doubling in absorption around the wavelength of 665 nm, which is the resonant frequency for the coupled whispering gallery mode. Shin and colleagues heterogeneously integrated p + + -doped InGaAs nanowires on the rear side of a silicon solar cell via catalyst-free MOCVD growth [ 64 ]. The rest of the rear surface of the silicon was passivated with a nitride layer and the nanowires were surrounded by a metal backreflector and rear contact.…”
Section: Gratings and Surface Structuresmentioning
confidence: 99%
“…Among the applications of III-V arrays on silicon are tunnel diodes [23], photoelectrochemical water splitting [24,25] and solar cells [26,27]. By combining a GaAs nanowire array on a silicon cell, a dual junction with a theoretical efficiency higher than 30% could, in theory, be achieved [28].…”
Section: Introductionmentioning
confidence: 99%
“…Semiconductor nanostructures offer new design concepts for various types of devices [1][2][3][4]. Among the semiconductor nanostructures, III-V nanotubes have attracted considerable interest because of their potential applications in optoelectronics, sensing and biology [5][6][7].…”
Section: Introductionmentioning
confidence: 99%