Heterogeneous kinetics and mass transfer in chemical vapour deposition processes

Hitchman, Michael L.; Curtis, B. J.

doi:10.1016/0022-0248(82)90171-3

Cited by 25 publications

(15 citation statements)

References 18 publications

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Section: Model Descriptionmentioning

confidence: 99%

“…~s,i,lk i] ' i where Ks.i,1 = As.i.le E,.I,/T, [5] Values for the parameters n~, qi.~, A~.~.I, A~, E~.,.,, and Ea.~ in Eq. [1]- [5] can, in principle, be obtained by matching experimental and theoretical results. For a system with five gas phase species, two homogeneous reactions, and three heterogeneous reactions, this treatment would give 58 adjustable kinetic parameters.…”

Section: Model Descriptionmentioning

confidence: 99%

“…As a result, only one activation energy, E, is required for adsorption (see Eq. [5]). A physical explanation is that reaction [II] is the dominant heterogeneous reaction; reaction [I] occurs primarily in the gas phase, and reaction [III] is essentially at equilibrium (11).…”

Section: Model Descriptionmentioning

confidence: 99%

“…Chemical vapor deposition (CVD) is a processing technique that is widely used in the manufacture of electronic materials and in the formation of surface coatings for high temperature applications. Several theoretical models of CVD have been proposed (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12). Each analysis requires physical property values for the species taken into consideration.…”

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confidence: 99%

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The Sensitivity of CVD Calculations to Physical Property Values

Rebenne

Pollard

1985

J. Electrochem. Soc.

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A mathematical model that describes chemical vapor deposition in an impinging jet reactor has been used to assess the sensitivity of theoretical predictions to physical property values for intermediate species. Uncertainties in thermochemical data for a species have greatest impact on predicted deposition rates when the composition level of that species near the surface is comparable to the local compositions of the reactants. Under these circumstances, relatively small changes in the values of thermodynamic quantities used for the species can produce significant differences in deposition rates calculated under equilibrium conditions. Also, with the modified property values, different values of the kinetic parameters may be required to fit available experimental data, and this can lead to different interpretations of the rate-limiting steps in the process. Quantitative information for chemical vapor deposition of boron from boron trichloride and hydrogen is presented.

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Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Descriptionmentioning

confidence: 99%

mentioning

confidence: 99%

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The Sensitivity of CVD Calculations to Physical Property Values

Rebenne

Pollard

1985

J. Electrochem. Soc.

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“…There is a dependency on concentration, however. Recent macroscopic scale modeling of a system similar to experiments I and II yielded that reduction of germanium doses to one-tenth the levels used in those two experiments sharply reduced the intensity of effects arising from the presence of substitutional germanium to the degree that normal variations in processing would mask their presence (10). The reduced germanium implant doses, on the order of 101~ Ge/cm 2, nominally correspond to levels used to preamorphize or postamorphize silicon.…”

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confidence: 97%

Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor

Breiland

Evans

1991

J. Electrochem. Soc.

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A research chemical vapor deposition reactor design is presented for a rotating disk configuration. The reactor can be operated under conditions such that nearly ideal, one-dimensional, infinite-radius disk behavior is achieved over most of the disk surface. Boundary conditions, flow stability under both isothermal and heated-disk conditions, and gas temperatures are addressed with both one-and two-dimensional numerical fluid mechanics models. Experimental verification of the design using flow visualization and laser Raman thermometry are presented.

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Interface Kinetical Limitations in Closed‐Tube Chemical Vapour Transport (I)

Paorici

Pessina

Zecchina

1986

Cryst. Res. Technol.

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A semiempirical method is proposed, by which the role of kinetical constraints to the growth in closed tube chemical vapour transport can be evidenced.The method is based on the evaluation of the ratio (@) between the quantity D!E which is related to the semiempirically-determined average diffusivity of the gaseous species during the growth process, and the quantity O r x , which is related to the maximum average diffusivity of the gaseous species as is predicted, through the choice of a suitable diffusional model, by the equilibrium thermodynamics and diffusion properties of the vapour phase. 1962, 1964), ii) absence of free-convection as well as of iii) heat-transport limitations, the CT-CVD crystallization rate can be given, for 8 one-dimensional model, by (1) AH AT -RPa Aa J = -

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Heterogeneous kinetics and mass transfer in chemical vapour deposition processes

Cited by 25 publications

References 18 publications

The Sensitivity of CVD Calculations to Physical Property Values

The Sensitivity of CVD Calculations to Physical Property Values

Design and Verification of Nearly Ideal Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor

Interface Kinetical Limitations in Closed‐Tube Chemical Vapour Transport (I)

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