Heterogeneously integrated III–V-on-silicon 2.3x <i>μ</i>m distributed feedback lasers based on a type-II active region

Wang, Ruijun; Sprengel, Stephan; Malik, Aditya; Vasiliev, Anton; Boehm, Gerhard; Baets, Roel; Amann, Markus‐Christian; Roelkens, Günther

doi:10.1063/1.4971350

Cited by 22 publications

(15 citation statements)

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“…The device cross section is similar to that shown in Ref. [16], but thinner DVS-BCB is used in the DFB laser arrays presented in this paper. The smaller gap between the active region and the DFB grating leads to a stronger coupling.…”

mentioning

confidence: 85%

“…However, the emission wavelength range of laser sources based on the InP-based Type I material is limited to around 2.3 μm [15]. Recently, we demonstrated 2.3x μm heterogeneous III-Von-silicon distributed feedback (DFB) laser sources based on an InP-based Type II heterostructure [16]. These lasers have been proven to be suitable for carbon monoxide gas detection using direct absorption spectroscopy, but the tuning range (by changing the driven current) of a single device is limited to 2 nm.…”

mentioning

confidence: 99%

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Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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Silicon photonics is a promising integrated-optics platform for optical communication and sensing applications. Integrating 2-3 μm wavelength widely tunable lasers on silicon photonic integrated circuits enables fully integrated spectroscopic sensors with different potential applications such as multi-species trace gas spectroscopy and bio-molecule detection. Here, we demonstrate a continuous-wave (CW) operated III-V-on-silicon distributed feedback (DFB) laser array covered a broad wavelength range from 2.28 to 2.43 μm. CW operation up to 25°C and an on-chip output power of 2.7 mW in a single mode at 5°C is achieved for lasers operating at 2.35 μm wavelength. Four-channel DFB laser arrays with a continuous tuning range of 10 nm and side mode suppression ratio of 40 dB over the whole range are also presented. This work is a major advance toward chip-scale silicon photonics spectroscopic sensing systems. Gas sensing based on short-wave infrared and mid-infrared absorption spectroscopy has been proven to be a reliable technology for trace-gas measurements with fast response time and a high degree of specificity to the target gas [1,2]. However, most present optical sensors consist of discrete optical components and a bulk gas cell, which limits their viability for applications in portable and economical gas analysis. Integrated photonics platforms offer the potential to realize miniature and low-cost optical gas sensors [3][4][5][6]. As one of the most promising integrated photonics platforms, silicon photonics has been well-developed for optical communication applications during the past decade [7]. In recent years, its applications have been extended to sensing applications, including on-chip spectroscopic sensing [8]. Silicon photonics gas sensors that target different components have been demonstrated, including those that use, e.g., microring resonators [9,10] or spiral waveguides [11] to interact with the gas medium. In these gas sensors, the light from an external laser source is coupled into the silicon chip for the on-chip absorption spectroscopy measurement. The development of fully integrated silicon photonic integrated circuits (PICs) in the 2.3 μm wavelength range enable compact gas sensors with high sensitivity, since many important industrial gases (e.g., NH 3 , CO, and CH 4 ) have strong absorption lines in this wavelength range [12]. It is also valuable for bio-sensing applications, such as non-invasive blood glucose measurements [8,13]. For a compact silicon photonics spectroscopic gas sensor, an integrated and tunable single-mode laser is the key component that should be developed. Recently, heterogeneously integrated III-V-on-silicon Fabry-Perot lasers around 2 μm were realized using strained InGaAs Type I heterostructures [14]. However, the emission wavelength range of laser sources based on the InP-based Type I material is limited to around 2.3 μm [15]. Recently, we demonstrated 2.3x μm heterogeneous III-Von-silicon distributed feedback (DFB) laser sources based on an InP-based Type II heteros...

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mentioning

confidence: 85%

mentioning

confidence: 99%

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Wang¹,

Sprengel²,

Boehm³

et al. 2017

Optica

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“…For example, pulse mode laser emission up to 4-μm wavelength at room temperature was recently demonstrated utilizing GaSb type-II quantum well structures [74]. Several instances of heterogeneous integration of III-V mid-IR diode lasers and amplifiers with Si waveguides have been reported, including InP-based FabryPerot (F-P) and DFB lasers emitting at 2.0 μm [75] and 2.3 μm [76,77], GaSb-based F-P laser operating at 2.38 μm [78], and InP-based optical amplifier at 2.0 μm [79]. Figure 5 depicts the structure of an InP-based multi-quantum-well (MQW) F-P laser on Si emitting at 2.3 μm [76], which exemplifies a large class of heterogeneously integrated III-V lasers.…”

Section: Siliconmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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“…However, the heterogeneous integration of GaSb‐based material is much less established than is the case for InP‐based material. Recently, we demonstrated the heterogeneous integration of III‐V/silicon laser sources emitting beyond 2.3 μm, by integrating InP‐based type‐II heterostructures on silicon PICs …”

Section: Heterogeneously Integrated Iii‐v/si Lasersmentioning

confidence: 99%

“…(a) Emission spectrum of the InP/Si type‐II DFB laser; (b) TDLAS spectrum of CO and the corresponding high‐resolution transmission molecular absorption database (HITRAN) spectrum. (Reproduced from)…”

Section: Heterogeneously Integrated Iii‐v/si Lasersmentioning

confidence: 99%

Novel Light Source Integration Approaches for Silicon Photonics

Wang

Abbasi

Dave

et al. 2017

Laser & Photonics Reviews

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174

108

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Silicon does not emit light efficiently, therefore the integration of other light-emitting materials is highly demanded for silicon photonic integrated circuits. A number of integration approaches have been extensively explored in the past decade. Here, the most recent progress in this field is reviewed, covering the integration approaches of III-V-to-silicon bonding, transfer printing, epitaxial growth and the use of colloidal quantum dots. The basic approaches to create waveguide-coupled on-chip light sources for different application scenarios are discussed, both for silicon and silicon nitride based waveguides. A selection of recent representative device demonstrations is presented, including high speed DFB lasers, ultra-dense comb lasers, short (850nm) and long (2.3μm) wavelength lasers, wide-band LEDs, monolithic O-band lasers and micro-disk lasers operating in the visible. The challenges and opportunities of these approaches are discussed.

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Heterogeneously integrated III–V-on-silicon 2.3x μm distributed feedback lasers based on a type-II active region

Cited by 22 publications

References 20 publications

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Broad wavelength coverage 23 μm III-V-on-silicon DFB laser array

Mid-infrared integrated photonics on silicon: a perspective

Novel Light Source Integration Approaches for Silicon Photonics

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