Heterogeneously Integrated III-V/Si Distributed Bragg Reflector Laser with Adiabatic Coupling

Descos, Antoine; Jany, Christophe; Bordel, D.; Duprez, Hélène; Farias, Giovanni B. de; Brianceau, P.; Menezo, Sylvie; Bakir, Badhise Ben

doi:10.1049/cp.2013.1502

Cited by 18 publications

(7 citation statements)

References 4 publications

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“…From these works, we draw the conclusion that, from a theoretical point of view, an optical mode propagating through a non-uniform propagation regime can be "adiabatically" index-tuned lossless over such transition. Applications derived from such theoretical studies have been translated into devices and prototypes of topical interest, notably in field of III-V on Silicon laser integration, where adiabatic transitions between a coupled system of Si-and III/V-based waveguides is used to define different kind of resonator architectures, such as, for instance, Fabry-Pérot [21], distributed Bragg reflector [22] and distributed feed-back lasers [23]. Analogously, the scope of this work is to conceive and fabricate a Si/SiO 2 HCG 1-D slow-light waveguide buttcoupled to classic silicon photonics wires (400 x 300 nm²) via a loss-less adiabatic transition between the index-like and slow-light regimes.…”

Section: Adiabatically-tapered Hcg Slow-light Waveguides On Soimentioning

confidence: 99%

Low-loss adiabatically-tapered high-contrast gratings for slow-wave modulators on SOI

et al. 2015

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In this communication, we report about the design, fabrication, and testing of Silicon-based photonic integrated circuits (Si-PICs) including low-loss flat-band slow-light high-contrast-gratings (HCGs) waveguides at 1.31 μm. The light slowdown is achieved in 300-nm-thick silicon-on-insulator (SOI) rib waveguides by patterning adiabatically-tapered highcontrast gratings, capable of providing slow-light propagation with extremely low optical losses, back-scattering, and Fabry-Pérot noise. In detail, the one-dimensional (1-D) grating architecture is capable to provide band-edge group indices n g ~ 25, characterized by overall propagation losses equivalent to those of the index-like propagation regime (~ 1-2 dB/cm). Such photonic band-edge slow-light regime at low propagation losses is made possible by the adiabatic apodization of such 1-D HCGs, thus resulting in a win-win approach where light slow-down regime is reached without additional optical losses penalty. As well as that, a tailored apodization optimized via genetic algorithms allows the flattening of slow-light regime over the wavelength window of interest, therefore suiting well needs for group index stability for modulation purposes and non-linear effects generation. In conclusion, such architectures provide key features suitable for power-efficient high-speed modulators in silicon as well as an extremely low-loss building block for non-linear optics (NLO) which is now available in the Si photonics toolbox.

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Section: Adiabatically-tapered Hcg Slow-light Waveguides On Soimentioning

confidence: 99%

Low-loss adiabatically-tapered high-contrast gratings for slow-wave modulators on SOI

et al. 2015

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“…Following this bonding step the substrate of the III-V wafers is removed and the lasers or amplifiers are further processed using standard processing techniques, including mesa etching and metallization. Such hybrid III-V on silicon lasers have mostly been demonstrated starting from InP active layers and output powers above 20mW, threshold currents below 20mA, operation till 80 o C and a wavelength tuning range of more than 45 nm were demonstrated [30,[95][96][97]. Recently also GaAs and GaSbbased devices were demonstrated [98,99].…”

Section: Wafer Scale Integration Of Lasersmentioning

confidence: 99%

“…In some cases the mode in the active section is a true hybrid mode, spread out over both the III-V and the silicon layers [100]. In other cases, the mode in the active section is largely located in the III-V layers [96,101]. In all cases the aim is to couple the mode fully to the silicon guide at the end of the active section, e.g.…”

Section: Wafer Scale Integration Of Lasersmentioning

confidence: 99%

Silicon Photonic Integration Platform—Have We Found the Sweet Spot?

Schmid

Reed

et al. 2014

IEEE J. Select. Topics Quantum Electron.

117

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The current trend in silicon photonics towards higher levels of integration as well as the model of using CMOS foundries for fabrication are leading to a need for standardization of substrate parameters and fabrication processes. In particular, for several established research and development foundries that grant general access, silicon-oninsulator wafers with a silicon thickness of 220 nm have become the standard substrate for which devices and circuits have to be designed. In this study we investigate the role of silicon device layer thickness in design optimization of various components that need to be integrated in a typical optical transceiver, including both passive ones for routing, wavelength selection, and light coupling as well as active ones such as monolithic modulators and on-chip lasers produced by hybrid integration. We find that in all devices considered there is an advantage in using a silicon thickness larger than 220 nm, either for improved performance or for simplified fabrication processes and relaxed tolerances.

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“…L'alignement étant réalisé de manière collective et avec une précision excellente lors de l'étape de photolithographie, le coût de fabrication unitaire est par conséquent réduit par rapport à la première approche. La figure 5 montre une vue en coupe d'un laser III-V sur silicium [9,10]. Nous observons au centre de ce schéma un guide III-V, servant uniquement à générer et amplifier la lumière, alors que la cavité est formée dans le silicium.…”

Section: Lasersunclassified