Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

An, Jinyoung; Hu, Shengdong

doi:10.1109/access.2019.2902246

Cited by 30 publications

(15 citation statements)

References 17 publications

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“…Also, the current measured at the place proximity to the gate has been 49.5 % less than the edge for V d = 0.7 V. The current at the edge of the device is measured and it has to be maintained high to ensure high electron mobility in the CSDG MOSFET structure [31][32][33]. The energy stored in the cylindrical capacitor inside the CSDG MOSFET, as shown in (3), constitutes the most significant factor for the mobility of electrons in the channel [15,34].…”

Section: Electron Density Profile Of Csdg Mosfetsmentioning

confidence: 99%

Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

Gowthaman¹,

Srivastava

2021

IEEE Access

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Cylindrical Surrounding Double-Gate (CSDG) MOSFETs have been designed for a suitable CMOS replacement to diminish the power and area tradeoff. With these MOSFETs below 70 nm node for Semiconductor Industry Association (SIA) roadmap, the CMOS technology has excellent immunity to the Short Channel Effects (SCE) and better scalability. To reduce the SCE, the device was analyzed by improving the gate oxide thickness between the gate terminal and channel material and replacing the conventional Silicon dioxide layer with numerous high-ƙ dielectric materials. The gate oxide thickness is scalable so that it should have the same thickness as that of the Equivalent Oxide Thickness (EOT). This kind of novel structure shows improvement in the ON-state current and OFF-state current. The usage of the cylindrical surrounding double-gate and the high-ƙ dielectric in the oxide layer makes the MOSFET with improved stability and controllability. In this paper, the high-ƙ material is chosen in a way that it has been applied in the CSDG environment and the electrical field, electron densities have been analyzed. The semiconductor can exhibit various energy bands at the Fermi level, commonly referred to as valley. These kinds of valley semiconductors, which have several valleys are called multi-valley semiconductors. The current value in valley-1 is 2.41 mA/μm; it also drops to 62.14 % than valley-4, which has 6.38 mA/μm. However, valley-2 and valley-3 have intermediate values. The energy in the sub-band for the operating region of the source has been observed to be 19.12 % to the drain side which has the value of 0.041 eV at the terminal end. This shows the modeled CSDG MOSFET works well with the operating electric field created by the cylindrical capacitors constituted by the two different gate materials surrounding the substrate.

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Section: Electron Density Profile Of Csdg Mosfetsmentioning

confidence: 99%

Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

Gowthaman¹,

Srivastava

2021

IEEE Access

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“…The drain current models were established in recent works in the nanometer regime [7][8][9][10][11], which concentrates only on the long channel models [5,12]. Hence, capacitance modeling with good accuracy of transconductance and electrical field in the cylindrical structure is essential for the accurate designing of CSDG MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

Gowthaman

Srivastava

2021

IEEE Access

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The advancements in semiconductor technology greatly impact the growth of hybrid VLSI devices and components. The nanometer technology has been possibly executed due to the enhancement of the scaling factor of the MOSFETs. Since the MOSFETs play a vital role in building dense devices, it also has several research insights with various semiconductor materials with high-ƙ dielectrics. The high-ƙ dielectric material in the place of the conventional oxide layer in the MOSFET design results in improved performance by reducing the Short Channel Effects (SCEs). In this research work, an analytical model of the lightly doped Cylindrical Surrounding Double-Gate (DG) MOSFET has been proposed. The capacitance modeling has been done for this cylindrical structure. This modeling has been analyzed for all operating regions of the transistors, capacitance estimation, and electrical field dependence on the capacitance. The results have been compared with the results derived from previous research and tabulated. This novel model occupies less area on the board, and routing is more accessible than the conventional DG MOSFET design. The overall results have been following the agreement in terms of accuracy, area tradeoff, and high speed, making the novel model suitable for high-frequency/RF hybrid applications.

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“…Nevertheless, a large reverse leakage current can occur due to the image charge of the metal-semiconductor junction and contamination by the metal for the Schottky contact [14]. Recently, studies on embedded heterojunction body diode MOSFETs have been conducted, but high leakage current and low critical electric field of polysilicon make it difficult to operate at high voltage [15,16].…”

Section: Introductionmentioning

confidence: 99%

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Cheon

Kim

2021

Materials

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In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

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Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

Cited by 30 publications

References 17 publications

Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

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Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Reverse Recovery Characteristic and Low Switching Loss

Cited by 30 publications

References 17 publications

Parametric Analysis of CSDG MOSFET With La2O3 Gate Oxide: Based on Electrical Field Estimation

Parametric Analysis of CSDG MOSFET With La2O3 Gate Oxide: Based on Electrical Field Estimation

Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

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Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation

Parametric Analysis of CSDG MOSFET With La₂O₃ Gate Oxide: Based on Electrical Field Estimation