Heterojunction effect on contact resistance minimization in staggered pentacene thin-film transistors

Zhong, Ya‐Nan; Gao, Xu; Wang, Chen-Huan; Xu, Jianlong; Wang, Sui‐Dong

doi:10.7567/apex.9.111601

Cited by 5 publications

(2 citation statements)

References 25 publications

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“…Nanometer‐ and sub‐nanometer‐scale conducting or semiconducting layers, such as graphene, CNT, and TiSi x , have been used at the contacts of TFTs, for gaining a better Ohmic behavior or tunneling behavior . Likewise, nanometer‐scale insulating layers also have been widely used as the gate insulators for deep sub‐micrometer transistors and memory devices based on floating‐gate principles .…”

Section: Structural and Electrical Characteristics Of Source‐gated Trmentioning

confidence: 99%

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

et al. 2019

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Thin insulating layers are used to modulate a depletion region at the source of a thin‐film transistor. Bottom contact, staggered‐electrode indium gallium zinc oxide transistors with a 3 nm Al2O3 layer between the semiconductor and Ni source/drain contacts, show behaviors typical of source‐gated transistors (SGTs): low saturation voltage (VD_SAT ≈ 3 V), change in VD_SAT with a gate voltage of only 0.12 V V−1, and flat saturated output characteristics (small dependence of drain current on drain voltage). The transistors show high tolerance to geometry: the saturated current changes only 0.15× for 2–50 µm channels and 2× for 9‐45 µm source‐gate overlaps. A higher than expected (5×) increase in drain current for a 30 K change in temperature, similar to Schottky‐contact SGTs, underlines a more complex device operation than previously theorized. Optimization for increasing intrinsic gain and reducing temperature effects is discussed. These devices complete the portfolio of contact‐controlled transistors, comprising devices with Schottky contacts, bulk barrier, or heterojunctions, and now, tunneling insulating layers. The findings should also apply to nanowire transistors, leading to new low‐power, robust design approaches as large‐scale fabrication techniques with sub‐nanometer control mature.

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Section: Structural and Electrical Characteristics Of Source‐gated Trmentioning

confidence: 99%

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

et al. 2019

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“…The standard approach consists of adding a dopant layer solely under the top electrodes for reducing contact resistance. The so-called contact doping increases the carrier concentration at the contact region and aids in reducing the depletion layer, filling interfacial traps, and improving the charge transport across the OSC film (reducing the access resistance) in a staggered bottom gate geometry. − The deposition of a thin dopant layer onto the OSC film in the channel has attracted interest as an additional approach to improve the device operation by achieving enhanced mobility and reducing threshold voltage by filling trap states in the channel. ,− Contact and channel doping, generally referred to as surface doping, relies on integer electron charge transfer between the OSC and the molecular dopant (i.e., ion pair formation).…”

Section: Introductionmentioning

confidence: 99%

Charge-Transfer Complexes in Organic Field-Effect Transistors: Superior Suitability for Surface Doping

Babuji

Cazorla

Solano

et al. 2022

ACS Appl. Mater. Interfaces

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We demonstrate the key role of charge-transfer complexes in surface doping as a successful methodology for improving channel field-effect mobility and reducing the threshold voltage in organic field-effect transistors (OFETs), as well as raising the film conductivity. Demonstrated here for 2,7doping by sequential deposition is consistently rationalized by the development of a cocrystalline structure that forms and evolves from the surface of the organic semiconductor film without trading the thin-film structure integrity. This scenario brings higher benefits for the device operation than doping by codeposition, where a decrease in the field-effect mobility of the device, even for a dopant content of only 1 mol %, makes codeposition less suitable. Insight into the structural and electronic properties of the interface satisfactorily explains the improved performance of OFETs upon the incorporation of the dopant and provides an understanding of the mechanism of doping in this system.

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Synapse‐Like Organic Thin Film Memristors

Zhong

Wang

Gao

et al. 2018

Adv Funct Materials

171

127

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Exploring new type of synapse–like electronic devices with fusion of computing and memory is a promising strategy to fundamentally approach to intelligent machines. Herein, organic thin film memristors (OTFMs) are achieved, functioning as electrically programmable and erasable analog memory with continuous and nonvolatile device states. The memristive characteristics of OTFMs stem from the asymmetric electrode configuration and the cumulative charge trapping/detrapping in a polymer electret layer, which enables the state–dependent current modulation analogous to the synaptic weight change in biological synapses. OTFMs are demonstrated to successfully emulate the essential synaptic functions, including the reversible potentiation and depression, and the short‐term plasticity such as the paired‐pulse facilitation and the long‐term plasticity such as the spike–timing dependent plasticity.

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Heterojunction effect on contact resistance minimization in staggered pentacene thin-film transistors

Cited by 5 publications

References 25 publications

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

Novel Tunnel‐Contact‐Controlled IGZO Thin‐Film Transistors with High Tolerance to Geometrical Variability

Charge-Transfer Complexes in Organic Field-Effect Transistors: Superior Suitability for Surface Doping

Synapse‐Like Organic Thin Film Memristors

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