Heterojunction-Free GaN Nanochannel FinFETs With High Performance

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

“…In particular, the inclined (1-10-3) GaN NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN layer that was grown on r-facet nanogrooves formed on m-sapphire substrates after nitridation. In our previously published results, growth of inclined (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) GaN NRs was also observed on the c-plane facets of a-GaN nucleation. 23,24 As a result, we found that the a-GaN nucleation layer plays an important role in the growth along different directions of inclined GaN NRs on nitridated m-sapphire substrates.…”

“…23,24 As a result, we found that the a-GaN nucleation layer plays an important role in the growth along different directions of inclined GaN NRs on nitridated m-sapphire substrates. The tilted angle and growth direction of these inclined GaN NRs are similar to the growth of (11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22) and (10-13) oriented-semipolar GaN films on m-sapphire substrates. 25 Overall, the formation mechanism of the inclined GaN NRs differed from that of previously reported inclined (1-10-3) GaN films grown on m-sapphire substrates.…”

“…Lee et al AIP Advances 6, 045209 (2016) opposite directions with reference to [11][12][13][14][15][16][17][18][19][20] m-sapp . 22 Thus, the layered growth of films purely in the (1-10-3) orientation has resulted in a rough surface and the degradation of crystal quality.…”

“…[7][8][9] The applications of GaN nanostructures focus primarily on light-emitting diodes, 10,11 nanolasers, 12 solar cells, 13 and high-electron-mobility transistors. 14 However, many studies on GaN nanorods (NRs) have utilized vertical arrays along the [0001] c-axis direction, which is perpendicular to the substrate surface, because of the growth mechanism that governs the crystallographic relationship between GaN and substrates such as c-sapphire, Si (111), MgO (111), and γ-LiAlO 2 . 2,4 In recent studies, the growth of inclined GaN NRs was investigated including metal catalyst initiated inclined GaN NRs on a thick a-GaN film formed on r-sapphire 15,16 and strain induced inclined GaN NRs grown on Si(111).…”

“…Specifically, the GaN NRs grew in a single inclined direction to the [11][12][13][14][15][16][17][18][19][20] sapp . Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer.…”