Heterojunction silicon solar cells performance optimization and sensitivity reduction to the interface defect states

Bashiri, Hadi; Karami, Mohammad Azim; nejad, shahramm mohammad

doi:10.1088/2053-1591/aa9c91

Cited by 7 publications

(5 citation statements)

References 25 publications

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“…Therefore, the optimized value of defect density is set to 10 10 cm −3 . Similar analysis on response of CSC solar cell based on c-Si defect density is performed by Bashiri et al [107].…”

Section: Defect Density Of Crystalline Silicon C-simentioning

confidence: 53%

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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Carrier selective solar cell has become one of the hot spots in the area of Si solar cell. The proposed architecture FTO/TiO2/c-Si/i-a-Si:H/Cu2O/back contact studied through simulation demonstrates a power conversion efficiency of 20.03%. This study is the first to report detailed exploration of effect of the conduction band density of states on the efficiency of Si solar cell. Through optimization, the conduction band density of state (1017 cm-3) drastically increases the power conversion efficiency from 18% (at 1021 cm-3) to 21.25% (at 1017 cm-3) i.e., an improvement of 18% relatively. Along with this, the parameters like absorber layer thickness, absorber’s defect density, thickness of electron transport layer and interface defect density are also optimized. Moreover, the charge transport properties and the impact of the Schottky barrier height at c-Si/TiO2 interface on band alignment is studied. After optimization of various physical parameters such as thickness (100 μm), conduction band density of states (1017 cm-3) and defect concentration (1010 cm−3) of c-Si layer, thickness of TiO2 layer (20 nm) and interface defect density at c-Si/TiO2 junction (1010 cm−2), a short-circuit current of 38.11 mA cm−2, open-circuit voltage of 0.84 V, fill factor of 85.99% is obtained, leading to an enhanced theoretical power conversion efficiency of 27.77%.

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“…Therefore, the optimized value of defect density is set to 10 10 cm −3 . Similar analysis on response of CSC solar cell based on c-Si defect density is performed by Bashiri et al [107].…”

Section: Defect Density Of Crystalline Silicon C-simentioning

confidence: 53%

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Bagade,

Patel

2023

Phys. Scr.

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“…The NPS material energy gap is definitely having higher energy gaps compared with bulk commercial silicon (1.11 eV) [10]. Table 1 shows 2 groups of samples (4,5,6) and (7,8,9), that display the inverse proportional relation be- The presence of various chemical functional groups and formation of NPS are described by the FTIR spectra in the range 400 -4000 cm −1 .…”

Section: Resultsmentioning

confidence: 98%

Photoluminescence Emission Control of Porous Silicon

Nabil¹

2019

SNL

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This paper reports the feasibility of synthesis and characterization of nano-porous silicon (NPS) powder and (Nickel/nano-porous silicon, Ni/NPS) nano-composite prepared using dual techniques (alkaline chemical etching process and ultra-sonication technique). The structural and the optical properties of the fabricated structures are inspected using X-ray Diffraction, Fourier Transform Infrared Spectrophotometer, Raman Spectroscopy, and Fluorescence Spectrophotometer Photoluminescence. All the results have agreed that NPS is one of the most suitable materials used as active material in the LED fabrication; by changing the main factors in the preparation process, so the different physical and chemical properties are obtained. NPS produces two emission regions that correspond to orange-red and dark red; on the other hand, (Ni/NPS) produce the yellow emission. So, the photoluminescence emission is controllable by adjusting the preparation conditions. The optical data recorded here are useful for the production of the nanoscale optical devices.

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“…5e-14 / 5e-15 [12] / [5] 5e-14 / 5e-15 [12] 2e-14 / 2e-15 [12] 1e-18 / 1e-19 [36] Dangling bonds peak energies (eV) 1.1 / 1.3 [12] 0.45 / 0.7 [12] 0.9 / 1.1 [12] 0.46 / 0.66 [36] * dbpeak N values were changed from the reference in order to obtain realistic activation energies (300 meV and 200 meV) for the p-a-Si:H and n-a-Si:H layers, respectively.…”

Section: Dangling Bondsmentioning

confidence: 99%

“…In particular, we analyse the effects of dangling bond defects in doped a-Si:H layers in relation to indium tin oxide (ITO) transparent conductive oxide (TCO) contacts with different electron affinities χ. Various numerical models emerged from the research of SHJ cells that vary in complexity and accuracy [5]- [14]. In this contribution we used the Sentaurus TCAD software suite [15] to numerically model and study the device's internal and external performance related to the mentioned effects for applied ITO electrodes with optimized and non-optimal electron affinities.…”

Section: Introductionmentioning

confidence: 99%

Analysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts

2022

Informacije MIDEM

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The effects of dangling-bond defects in doped hydrogenated amorphous-silicon layers (p-a-Si:H and n-a-Si:H) in heterojunction silicon (SHJ) solar cells are studied in relation to applied Indium-Tin-Oxide (ITO) contacts with different electron affinities. A state-of-the-art numerical model of the SHJ solar cell was employed, including ITO contacts as full, volumetric semiconductor layers, applying the trap-assisted, band-to-band and direct tunnelling mechanisms at heterointerfaces in the device. The levels of dangling bond defect concentrations were varied in both p-a-Si:H and n-a-Si:H layers and ITOs with two different electron affinities were considered at both sides of the device. We show that the effects of the defects on the short-circuit current density, open-circuit voltage, fill factor and conversion efficiency of the device become more pronounced if ITOs with non-optimal electron affinities are used. Possibility to reach higher doping levels of the doped a-Si:H layers would mitigate the effects of its dangling bond states, which becomes more important if ITO electron affinity is not optimized to the doped a-Si:H layers. We demonstrate that the reduced efficiency due to the increase in dangling-bond density originates from the decrease of the fill-factor and open-circuit voltage, whereas the short-circuit current density has a small effect on efficiency for the chosen variation span. The reduction of the fill-factor is further explained by a drop in maximum-power-point voltage, which is more pronounced if optimization of ITO electron affinity is not taken into account.

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Heterojunction silicon solar cells performance optimization and sensitivity reduction to the interface defect states

Cited by 7 publications

References 25 publications

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Photoluminescence Emission Control of Porous Silicon

Analysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts

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Heterojunction silicon solar cells performance optimization and sensitivity reduction to the interface defect states

Cited by 7 publications

References 25 publications

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO2 interface for efficient heterojunction solar cell

Photoluminescence Emission Control of Porous Silicon

Analysis of effects of dangling-bond defects in doped a-Si:H layers in heterojunction silicon solar cells with different electron affinities of ITO contacts

Contact Info

Product

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Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell

Insight into conduction band density of states at c-Si/TiO₂ interface for efficient heterojunction solar cell