A single-photon avalanche diode (SPAD) fabricated in a 90nm standard CMOS process is reported. The detector comprises an octagonal multiplication region and a guard ring to prevent premature edge breakdown using exclusively standard layers. The proposed structure is the result of a systematic study aimed at miniaturization, while optimizing overall performance. The device exhibits a dark count rate of 16 kHz at room temperature, a maximum photon detection probability of 16% and the jitter of 398ps at a wavelength of 637nm. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures.

This paper presents a novel modeling approach to optimize the electrical and thermal energy management of a multiple energy carrier micro-grid with the aim of minimizing the operation cost such that system constraints are satisfied. The proposed micro-grid includes a micro-turbine, a fuel cell, a reject burning (RB) power plant, a wind turbine generator system, a boiler, an anaerobic reactor-reformer system, an inverter, a rectifier, and some energy storage units. The model uses day-ahead forecasting (24 hours) to estimate the electrical and thermal loads on a micro-grid network. A day-ahead forecast is also used to estimate electricity generation from wind turbines. Due to the uncertainty associated with day-ahead forecasts a Monte Carlo simulation is used to estimate thermal loads, electrical loads, and wind power generation. Also, a real time pricing (RTP) demand response program is used to shift non-vital loads. The operating cost of the micro-grid is minimized through the particle swarm optimization algorithm. The simulation results demonstrate the proposed method is capable of minimizing the operating cost of the micro-grid whilst adhering to constraints on pollution and a real-time pricing demand response program. In addition, the results obtained by applying the proposed method are analyzed and validated through scenario testing.

A single-photon avalanche diode (SPAD) fabricated in a 90nm standard CMOS process is reported. The detector comprises an octagonal multiplication region and a guard ring to prevent premature edge breakdown using exclusively standard layers. The proposed structure is the result of a systematic study aimed at miniaturization, while optimizing overall performance. The device exhibits a dark count rate of 16 kHz at room temperature, a maximum photon detection probability of 16% and the jitter of 398ps at a wavelength of 637nm. Applications include time-of-flight 3D vision, fluorescence lifetime imaging microscopy, fluorescence correlation spectroscopy, and time-resolved gamma/X-ray imaging. Standard characterization of the SPAD was performed in different bias voltages and temperatures.

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Abstract-Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-μm CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-μm CMOS technology. The RTS characteristics are evaluated experimentally and verified theoretically with respect to bias and temperature.Index Terms-Dark count rate (DCR), random telegraph signal (RTS), single-photon avalanche diodes (SPADs).