RTS Noise Characterization in Single-Photon Avalanche Diodes

Karami, Mohammad Azim; Carrara, Lucio; Niclass, Cristiano; Fishburn, Matthew W.; Charbon, Edoardo

doi:10.1109/led.2010.2047234

Cited by 29 publications

(13 citation statements)

References 14 publications

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“…During the course of the above-mentioned investigation of DCR, temporal fluctuations of DCR between different states have been observed in two SPADs. Similar fluctuations, which are known as random telegraph signal (RTS) noise, have been previously observed in irradiated SPADs [19]. This instability is mainly due to deep level traps and defects causing superposition of several levels of fluctuations.…”

Section: Random Telegraph Signal (Rts) Noisesupporting

confidence: 66%

Design and characterization of a p+/n-well SPAD array in 150nm CMOS process

Pancheri

Betta

et al. 2017

Opt. Express

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This paper reports on characterization results of a single-photon avalanche diode (SPAD) array in standard CMOS 150nm technology. The array is composed by 25 (5 × 5) SPADs, based on p/n-well active junction along with a retrograde deep n-well guard ring. The square-shaped SPAD has a 10µm active diameter and 15.6µm pitch size, achieving a 39.9% array fill factor. Characterization results show a good breakdown voltage uniformity (40mV max-min) within each chip and 17mV/°C temperature coefficient. The median DCR is 0.4Hz/µm, and the afterpulsing probability is 0.85% for a dead time of 150ns at 3V excess bias voltage. The peak PDP is 31% at 450nm wavelength and a good uniformity (1.1% standard deviation) is observed for the array at 5V excess bias. The single SPADs exhibit a timing jitter of 52ps (FWHM) and 42ps (FWHM) under a 468-nm and a 831-nm laser, respectively. The crosstalk probability as a function of pixel-to-pixel distance and excess bias voltage is presented, and random telegraph signal (RTS) noise is also discussed in detail.

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Section: Random Telegraph Signal (Rts) Noisesupporting

confidence: 66%

Design and characterization of a p+/n-well SPAD array in 150nm CMOS process

Pancheri

Betta

et al. 2017

Opt. Express

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“…The circled data points in Figure 10(b) show larger extracted DE values than the mean value of any surrounding data points. The reason for these outliers is a bi-stable dark count rate of that particular SPAD detector [32]. When we take several DE measurements at one attenuator setting, we only measure the dark count rate once before acquiring the actual source-photon counts for this attenuator setting.…”

Section: Methodsmentioning

confidence: 99%

Calibration of free-space and fiber-coupled single-photon detectors^*

et al. 2019

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We measure the detection efficiency of single-photon detectors at wavelengths near 851 nm and 1533.6 nm. We investigate the spatial uniformity of one free-space-coupled single-photon avalanche diode and present a comparison between fusion-spliced and connectorized fiber-coupled single-photon detectors. We find that our expanded relative uncertainty for a single measurement of the detection efficiency is as low as 0.70 % for fiber-coupled measurements at 1533.6 nm and as high as 1.78 % for our free-space characterization at 851.7 nm. The detection-efficiency determination includes corrections for afterpulsing, dark count, and count-rate effects of the single-photon detector with the detection efficiency interpolated to operation at a specified detected count rate. Experimental methodsAll our measurements and calibrations are made using the experimental scheme shown in Figure 1. Laser light through a variable fiber attenuator (VFAinput) is sent to the splitter/attenuator unit where the input is monitored and the output-to-monitor ratio ( out/mon ) of 10 -5 is measured using our calibrated power meter (PM) and monitor power meter (PMmon). Key to the measurements are the transmittance of the splitter/attenuator unit and the output-to-monitor ratio of the splitter/attenuator unit. Both are determined from the fiber beam splitter (FBS) splitting ratio and the attenuation of VFA, as measured using the calibrated power meter and the monitor power meter. In addition, this method relies on the stability of the splitter/attenuator unit's output-to-monitor ratio, the polarization and wavelength of the light versus time, and the independence of the output-to-monitor ratio with input optical power. We verify each of these either during the measurement or by prior characterization of the setup components.

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“…First, there are small fluctuations and drifts in detection efficiency and/or LED intensity that affect the results of 1hour-long integration. Another small contribution is a possible bistability of dark counts [34]. These fluctuations would cause the measured distributions to be wider.…”

Section: Spad Measurements: Results and Discussionmentioning

confidence: 99%

Counting Statistics of Actively Quenched SPADs Under Continuous Illumination

Straka

Grygar

Hloušek

et al. 2020

J. Lightwave Technol.

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This work presents stochastic approaches to model the counting behavior of actively quenched single-photon avalanche diodes (SPADs) subjected to continuous-wave constant illumination. We present both analytical expressions and simulation algorithms predicting the distribution of the number of detections in a finite time window. We also present formulas for the mean detection rate. The approaches cover recovery time, afterpulsing, and twilight pulsing. We experimentally compare the theoretical predictions to measured data using commercially available silicon SPADs. Their total variation distances range from 10 −5 to 10 −2 .

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RTS Noise Characterization in Single-Photon Avalanche Diodes

Cited by 29 publications

References 14 publications

Design and characterization of a p+/n-well SPAD array in 150nm CMOS process

Design and characterization of a p+/n-well SPAD array in 150nm CMOS process

Calibration of free-space and fiber-coupled single-photon detectors^*

Counting Statistics of Actively Quenched SPADs Under Continuous Illumination

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RTS Noise Characterization in Single-Photon Avalanche Diodes

Cited by 29 publications

References 14 publications

Design and characterization of a p+/n-well SPAD array in 150nm CMOS process

Design and characterization of a p+/n-well SPAD array in 150nm CMOS process

Calibration of free-space and fiber-coupled single-photon detectors*

Counting Statistics of Actively Quenched SPADs Under Continuous Illumination

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Calibration of free-space and fiber-coupled single-photon detectors^*