Heterojunctions of Amorphous Silicon and Silicon Single Crystals

Fuhs, W.; Niemann, K.; Stuke, J.

doi:10.1063/1.2945985

Cited by 40 publications

(33 citation statements)

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“…In addition to the asymmetry in capture cross sections described before, the different band offset configurations in nand p-type cells are believed to affect carrier recombination and transport at the heterointerface, and hence V oc and FF [3], [4]. Detailed analysis of band offsets at the a-Si:H/c-Si interface by photoelectron spectroscopy and surface photovoltage measurements showed that the conduction band offset ΔE C and the valence band offset ΔE V are independent of both substrate and film doping, being in all cases roughly equal to 0.15 and 0.45 eV, respectively [3], [21].…”

Section: A Effect Of the Wafer Doping Type And Emitter Position On Smentioning

confidence: 99%

“…Detailed analysis of band offsets at the a-Si:H/c-Si interface by photoelectron spectroscopy and surface photovoltage measurements showed that the conduction band offset ΔE C and the valence band offset ΔE V are independent of both substrate and film doping, being in all cases roughly equal to 0.15 and 0.45 eV, respectively [3], [21]. More recent data showed also that ΔE V further increases when the hydrogen content in a-Si:H is increased, whereas ΔE C remains constant [22].…”

Section: A Effect Of the Wafer Doping Type And Emitter Position On Smentioning

confidence: 99%

“…A large band offset in the minority carrier band provides precisely such a condition. Since holes are the minority carriers in n-type c-Si and since ΔE V > ΔE C , V oc of n-type cells may be higher than that of p-type cells [3], [4]. In the p-type case, electrons (minority carriers) may recombine more easily at the interface due to a lower ΔE C barrier.…”

Section: A Effect Of the Wafer Doping Type And Emitter Position On Smentioning

confidence: 99%

“…Fundamental issues with the band structure, such as the asymmetry between the conduction and valence band offsets (see Fig. 1), are often assumed to reduce the performance of p-type heterojunction solar cells [3], [4]. Nevertheless, n-type wafers are less readily available on the market than p-type wafers, which are widely used for the production of conventional (diffused-emitter) silicon solar cells.…”

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confidence: 99%

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>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared

Descoeudres

Holman

Barraud

et al. 2013

IEEE J. Photovoltaics

199

127

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Abstract-The properties and high-efficiency potential of frontand rear-emitter silicon heterojunction solar cells on n-and p-type wafers were experimentally investigated. In the low-carrierinjection range, cells on p-type wafers suffer from reduced minority carrier lifetime, mainly due to the asymmetry in interface defect capture cross sections. This leads to slightly lower fill factors than for n-type cells. By using high-quality passivation layers, however, these losses can be

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Section: A Effect Of the Wafer Doping Type And Emitter Position On Smentioning

confidence: 99%

Section: A Effect Of the Wafer Doping Type And Emitter Position On Smentioning

confidence: 99%

Section: A Effect Of the Wafer Doping Type And Emitter Position On Smentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared

Descoeudres

Holman

Barraud

et al. 2013

IEEE J. Photovoltaics

199

127

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“…The concept of solar cells with amorphous and crystalline silicon (a-Si:H/c-Si) heterojunction was first time proposed by Fuhs et al in 1974 [1], and first time fabricated in the group of Hamakawa et al [2], in 1985. Since then a number of laboratories have been formed which were involved in the development of this solar-cells technology.…”

Section: Introductionmentioning

confidence: 99%

Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

Mikolášek

Jakaboviš

Řeháček

et al. 2014

Journal of Electrical Engineering

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In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 X 1021m—3.

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Defect engineering of p‐type silicon heterojunction solar cells fabricated using commercial‐grade low‐lifetime silicon wafers

Chen

Kim

Shi

et al. 2019

Progress in Photovoltaics

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In this work, we integrate defect engineering methods of gettering and hydrogenation into silicon heterojunction solar cells fabricated using low-lifetime commercial-grade p-type Czochralski-grown monocrystalline and high-performance multicrystalline wafers. We independently assess the impact of gettering on the removal of bulk impurities such as iron as well as the impact of hydrogenation on the passivation of grain boundaries and B-O defects. Furthermore, we report for the first time the susceptibility of heterojunction devices to light-and elevated temperature-induced degradation and investigate the onset of such degradation during device fabrication. Lastly, we demonstrate solar cells with independently verified 1-sun open-circuit voltages of 707 and 702 mV on monocrystalline and multicrystalline silicon wafers, respectively, with a starting bulk minority-carrier lifetime below 40 microseconds. These remarkably high opencircuit voltages reveal the potential of inexpensive low-lifetime p-type silicon wafers for making devices with efficiencies without needing to shift towards n-type substrates.

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Heterojunctions of Amorphous Silicon and Silicon Single Crystals

Cited by 40 publications

References 0 publications

>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared

>21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared

Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

Defect engineering of p‐type silicon heterojunction solar cells fabricated using commercial‐grade low‐lifetime silicon wafers

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