Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

Sun, Mengxing; Fang, Qiyi; Xie, Dan; Sun, Yang; Liu, Qian; Xu, Jianlong; Xiao, Pan; Teng, Changjiu; Li, Weiwei; Ren, Tian‐Ling; Zhang, Yanfeng

doi:10.1007/s12274-017-1855-1

Cited by 78 publications

(41 citation statements)

References 39 publications

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Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

“…Zhang et al presented an improved GQD/WSe 2 /Si heterojunction photodetector by introducing GQDs into the system. The responsivity improved from 2 to 707 mA W −1 , and the detectivity increased to 4.51 × 10 9 Jones from 0.24 × 10 9 Jones, resulting in a fast response speed (0.2 ms) . Figure A,B shows the band structure of the GQD/WSe 2 /Si heterojunction at equilibrium and under reverse bias.…”

Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

“…Energy band diagrams of GQDs/WSe 2 /Si heterojunction A at equilibrium state and B under reverse bias voltage while illuminated . E C , E V , and E F denote the conduction band, valence band, and Fermi energy level, respectively.…”

Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

“…[68][69][70] Although research on graphene/Si heterostructures has developed to a fairly mature stage, a limitation is that these heterostructures always have high leakage current noise due to the high density F I G U R E 4 Energy band diagrams of GQDs/WSe 2 /Si heterojunction A at equilibrium state and B under reverse bias voltage while illuminated. 81 E C , E V , and E F denote the conduction band, valence band, and Fermi energy level, respectively. Copyright 2018, Springer.…”

Section: Graphene/simentioning

confidence: 99%

“…Similar to graphene, TMDCs have many excellent properties, such as good mechanical flexibility and thermal stability, and have been widely used in optical and electrical devices. [76][77][78][79][80][81][82][83][84][85] Although TMDCs have a lower mobility than graphene, they have higher optical absorptivity and a tunable bandgap due to the different number of layers. As a typical 2D layered TMDC, molybdenum disulfide (MoS 2 ) can be integrated with Si into a heterostructure with desirable performance.…”

Section: Tmdcs/simentioning

confidence: 99%

See 4 more Smart Citations

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Tian

Sun

Chen

et al. 2019

InfoMat

101

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Due to its excellent electrical and optical features, silicon (Si) is highly attractive for photodetector applications. The design and fabrication of low‐dimensional semiconductor/Si hybrid heterostructures provide a great platform for fabricating high‐performance photodetectors, thereby overcoming the inherent limitations of Si. This review focuses on state‐of‐the‐art Si heterostructure‐based photodetectors. It starts with the introduction of three different device configurations, that is, photoconductors, photodiodes, and phototransistors. Their working mechanisms and relative pros and cons are introduced, and the figures of merit of photodetectors are summarized. Then, we discuss the device physics/design, photodetection performance, and optimization strategies for Si‐based photodetectors. Finally, future challenges in the photodetector applications of Si‐based hybrid heterostructures are discussed.

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Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

Section: D Nanomaterial/si Heterostructurementioning

confidence: 99%

Section: Graphene/simentioning

confidence: 99%

Section: Tmdcs/simentioning

confidence: 99%

See 3 more Smart Citations

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Tian

Sun

Chen

et al. 2019

InfoMat

101

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Mixed‐Dimensional Van der Waals Heterostructures Enabled Optoelectronic Synaptic Devices for Neuromorphic Applications

Sun

Ding

Xie

2021

Adv Funct Materials

Self Cite

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Neuromorphic devices provide a hardware platform to implement synaptic functions into artificial electronic devices, which opens a new way to overcome the von Neumann bottleneck from the device level. Optoelectronic synaptic devices are expected to break the limitations of electrically stimulated synapses due to wider bandwidth, higher speed, and lower crosstalk. However, most optoelectronic synaptic devices are enabled by the defect-dominant photogenerated carrier trapping/de-trapping. Therefore, designable device structure and controllable synaptic functions are urgently desirable in optoelectronic synaptic devices. Among various functional materials, low-dimensional materials exhibit excellent optical and electrical properties and can be easily applied to build van der Waals (vdW) heterostructures with ideal surface characteristics. Herein, the basic morphology and characteristics of lowdimensional materials have been introduced and the typical constitution of mixed-dimensional (MD) vdW heterostructures has been reviewed to highlight their unique light-matter interaction. Then, optoelectronic synaptic devices are classified into three categories by the role of light as input, modulated and output signals based on different photoelectric conversion mechanisms. Furthermore, a bridge between neuromorphic devices and practical applications is established to illustrate their potential in neuromorphic systems. Finally, great challenges and possible study directions are presented to guide the development of MD vdW heterostructures in future neuromorphic systems.

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Refractory‐Metal‐Based Chalcogenides for Energy

Özel

Arkan

Coskun

et al. 2022

Adv Funct Materials

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When it is asked, “where can refractory metals be used?,” the possible shortest answer is, “where cannot they be used?” The uses of refractory‐metal‐based compounds in research and industry are too many to be enumerated; nevertheless, some outstanding examples are briefly mentioned here. Essentially, chalcogenide forms of refractory metals are preferred in the fabrication of high‐performance structures. Therefore, expanding the current studies that usually focus on tungsten‐ and molybdenum‐based structures to other materials may open new opportunities. Moreover, research on ternary and quaternary structures can also be a keystone in creating high‐performance products. The rationale of the present review is to give a brief overview of the recent history of refractory‐metal‐based chalcogenides (RMCs). Initially, the framework is confined to the general design and approaches for the synthesis of refractory metal chalcogenides. The assay is continued by extending with characteristic features of materials from crystalline properties to thermoelectric attributes and examining device fabrication processes. Taken together, the device fabrication part where RMCs are mainly used is extensively focused upon. Finally, outlook and future perspectives are given on the design and construction of RMCs to enable future inspiration and innovation.

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Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

Cited by 78 publications

References 39 publications

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Low‐dimensional nanomaterial/Si heterostructure‐based photodetectors

Mixed‐Dimensional Van der Waals Heterostructures Enabled Optoelectronic Synaptic Devices for Neuromorphic Applications

Refractory‐Metal‐Based Chalcogenides for Energy

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