Heterostructures of BaTiO3 bilayer films grown on SrTiO3 (001) under different oxygen pressures

Crystallographic and dielectric properties of highly oriented BaTiO3 films: Influence of oxygen pressure utilized during pulsed laser deposition

“…Several mechanisms have been suggested to affect the change in crystal phase and lattice constant, such as, (1) deviation in stoichiometry [18,22], (2) lattice mismatch [3,4] and (3) different thermal expansion between substrate and film [27,29], (4) kinetic energy [17] and the (5) directional distribution of particles [17] during vacuum deposition. Strain due to lattice mismatch between film and substrate changes the lattice parameter of films, especially, when epitaxial thin films are grown on near lattice-matched substrates in which large intrinsic strains are created by the film lattice attempting to follow the substrate lattice periodicity.…”

“…One demonstrated means for tuning the lattice parameter of perovskite thin films is to vary the oxygen partial pressure during film growth [17][18][19][20][21][22][23]. Deposition kinetics [17] and the resultant stoichiometry [22] of the grown films have been proposed as explanations for this phenomenon.…”

“…As a result of the shift in lattice parameter mismatch between film and substrate, the stress state can be changed. This, in turn, can result in a change in preferred orientation [17,18,20,22,23] and even the crystal phase of the film, e.g., the paraelectric or ferroelectric phase, depending on working pressure [24].…”

Optical properties of BaTiO3 thin films: Influence of oxygen pressure utilized during pulsed laser deposition

“…c-orientation is preferred in memory elements while a-oriented domains are desired in electro-optic devices [12] enabling reduced driving voltage for the intensity modulation [1]. In this work, the measured electro-optic response was relatively low presumably due to non-optimal domain structure in the c-oriented films, otherwise suitable (properly waveguiding) for Mach-Zehnder devices.…”

Fabrication and Characterization of BaTiO3/Pt/C/Pt/Ti/SiO2 Structures

“…BTO is considered to hold particular promise because it is transparent, has a high piezoelectric constant d 33 of over 190 pm/N, and does not contain lead. BTO films have been deposited by several methods such as sol-gel coating [6] [7], pulse laser deposition [8] [9], and rf magnetron sputtering [10] [11]. Obtaining high-quality BTO films is not easy although they have been deposited at low temperatures [13] [14] on various substrates [17] [18] and with different doping impurities [15] [16].…”