Hexagonal AlN films grown on nominal and off-axis Si(001) substrates

Lebedev, V.; Jinschek, Joerg R.; Kräußlich, J.; Kaiser, Ute; Schröter, Bernd; Richter, Wolfgang

doi:10.1016/s0022-0248(01)01241-6

Cited by 41 publications

(44 citation statements)

References 14 publications

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“…In order to investigate the structural stability of (0001)-oriented 2H-AlN grown on 3C-Si(001), we exemplify AlN/Si(001) with epitaxial orientation relationship of AlN<01-10>||Si[110] based on findings by Lebedev et al [1]. Figure 1 depicts various computational models considered in this study.…”

Section: Structural Stabilitymentioning

confidence: 99%

“…To this end, studies of AlN deposition on Si(001) substrates by epitaxial growth techniques were reported with various epitaxial relationship between AlN thin films and Si(001) substrates. Lebedev et al investigated AlN thin films grown on nominal and off-axis Si(001) substrate by plasma-assisted molecular beam epitaxy [1]. They revealed that wurtzite (2H) AlN films with two-domain structure (AlN 1 We have theoretically studied structural stability of GaN films grown on (001)-oriented substrates with zinc blende structure (3C) using our empirical interatomic potentials [3].…”

mentioning

confidence: 99%

“…Lebedev et al investigated AlN thin films grown on nominal and off-axis Si(001) substrate by plasma-assisted molecular beam epitaxy [1]. They revealed that wurtzite (2H) AlN films with two-domain structure (AlN 1 We have theoretically studied structural stability of GaN films grown on (001)-oriented substrates with zinc blende structure (3C) using our empirical interatomic potentials [3]. Our calculated results imply that the 3C-GaN can be fabricated because of energy profit at the interface between 3C-GaN and 3C substrates.…”

mentioning

confidence: 99%

“…This is inconsistent with the fact that the 2H-AlN can be grown even on Si(001) with diamond (3C) structure. In this study, we investigate the structural stability of 2H-AlN on 3C-Si(001) and favourable epitaxial relationship using the Khor-Das Sarma type empirical interatomic potentials to calculate the cohesive energies for various interface models, which were found in AlN/Si(001) grown by plasma-assisted molecular beam epitaxy and reactive magnetron sputtering [1,2]. 2 Computational methods In order to investigate the cohesive energies E for AlN/Si(001), the empirical in-teratomic potential V ij used in this study is given by the following equation [4,5].…”

mentioning

confidence: 99%

“…(1), the system energies are calculated for various AlN/Si(001) systems including AlN(001) coherently grown on Si(001), AlN(001)/Si(001) with misfit dislocations (MDs), AlN(0001) /Si(001) with/without MDs, and AlN(0001) stacked on Si(001) on the basis of experimental findings [1,2]. Considering the periodicity of MDs, we employ the smallest unit cells in the x-and the y-directions.…”

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confidence: 99%

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Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates

Nakano

Akiyama

et al. 2011

Phys. Status Solidi C

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Epitaixial relationship between AlN thin films and Si(001) substrates is systematically investigated using the empirical interatomic potential on the basis of the experimental findings for AlN on Si(001) grown by plasma‐assisted molecular beam epitaxy and reactive magnetron sputtering. The calculated results for the structural stability of AlN on Si(001) reveal that (0001)‐oriented 2H‐AlN becomes stable even on 3C‐Si(001) beyond the film thickness of six monolayers with epitaxial relationship of AlN〈01‐10〉‖Si[110]. This is consistent with the experimental results found in plasma‐assisted molecular beam epitaxy. We also estimate the relative appearance ratio among various rotational domains with AlN〈11‐20〉‖Si[110] (Type A) and AlN〈01‐10〉‖Si[100] (Type B) in addition to the AlN〈01‐10〉‖Si[110] (Type C). The calculated appearance ratio such as 23.7% (Type A), 30.7% (Type B), and 14.8% (Type C) are favourably compared with respective experimental results such as 24.7%, 26.5%, and 22.8% obtained by reactive magnetron sputtering. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Structural Stabilitymentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates

Nakano

Akiyama

et al. 2011

Phys. Status Solidi C

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Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Feng

Yang

Zhang

et al. 2019

Adv Funct Materials

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Fabricating single-crystalline gallium nitride (GaN)-based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal-oxide-semiconductor circuits, is a prerequisite for next-generation high-performance electronics and optoelectronics. However, the direct epitaxy of single-crystalline GaN on a Si(100) substrate remains challenging due to the asymmetric surface domains of Si(100), which can lead to polycrystalline GaN with a two-domain structure. Here, by utilizing singlecrystalline graphene as a buffer layer, the epitaxy of a single-crystalline GaN film on a Si(100) substrate is demonstrated. The in situ treatment of graphene with NH 3 can generate sp 3 CN bonds, which then triggers the nucleation of nitrides. The one-atom-thick single-crystalline graphene provides an in-plane driving force to align all GaN domains to form a single crystal. The nucleation mechanisms and domain evolutions are further clarified by surface science exploration and first-principle calculations. This work lays the foundation for the integration of GaN-based devices into Si-based integrated circuits and also broadens the choice for the epitaxy of nitrides on unconventional amorphous or flexible substrates.

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Nanocrystalline AlN:Si field emission arrays for vacuum electronics

Lebedev

Morales

Fischer

et al. 2006

Physica Status Solidi (a)

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Nano‐crystalline AlN:Si cold cathodes were grown by molecular beam epitaxy on prefabricated silicon μ ‐tip field emission arrays (FEAs). The investigated FEAs showed an uniform tip distribution and reproducible emission properties. Current densities of up to 0.7 mA for a 4 × 106 tips array (1 tip/μm2) have been achieved at a relatively modest voltage of ∼ 60 V. The emitters revealed a good current stability with fluctuations of about 4% at constant voltage. The FEAs demonstrated a 40‐fold decrease in operating voltage for a given current following the “activation” of the surface by high field conditioning. The corresponding changes in slope of the Fowler–Nordheim plot and UV photoemission spectra confirm that the surface cleaning causes a reduction of the surface emission barrier at least by factor of 3. The observed large electron affinity of the as loaded surface is presumed to be caused by the adsorption of oxygen and carbon containing species. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Hexagonal AlN films grown on nominal and off-axis Si(001) substrates

Cited by 41 publications

References 14 publications

Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates

Empirical potential approach to the epitaxial relationship between AlN thin films and Si(001) substrates

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Nanocrystalline AlN:Si field emission arrays for vacuum electronics

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