Hexagonal warping induced nonlinear planar Nernst effect in nonmagnetic topological insulators

Yu, Xiao-Qin; Zhu, Zhen-Gang; Su, Gang

doi:10.1103/physrevb.103.035410

Cited by 10 publications

(7 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…It could be interesting to analyze how the change in the warping symmetry affects various surface phenomena associated with Dirac physics [48][49][50][51][52][53][54].…”

Section: Discussionmentioning

confidence: 99%

Magnetic warping in topological insulators

Naselli,

Moghaddam,

Di Napoli

et al. 2022

Preprint

View full text Add to dashboard Cite

We analyze the electronic structure of topological surface states in the family of magnetic topological insulators MnBi2nTe3n+1. We show that, at natural-cleavage surfaces, the Dirac cone warping changes its symmetry from hexagonal to trigonal at the magnetic ordering temperature. In particular, an energy splitting develops between the surface states of same band index but opposite surface momenta upon formation of the long-range magnetic order. As a consequence, measurements of such energy splittings constitute a simple protocol to detect the magnetic ordering via the surface electronic structure, alternative to the detection of the surface magnetic gap. Interestingly, while the latter signals a nonzero surface magnetic flux, the trigonal warping predicted here is, in addition, sensitive to the direction of the surface magnetic flux.

show abstract

“…It could be interesting to analyze how the change in the warping symmetry affects various surface phenomena associated with Dirac physics [48][49][50][51][52][53][54].…”

Section: Discussionmentioning

confidence: 99%

Magnetic warping in topological insulators

Naselli,

Moghaddam,

Di Napoli

et al. 2022

Preprint

View full text Add to dashboard Cite

show abstract

“…钽酸钾(KTaO 3 )是一种钙钛矿结构的绝缘材料，其氧八面体中的钽离子为 5d 0 轨道排列，因此其许多基本性质与 SrTiO 3 相似，如宽禁带 [83] 、表面/界面处存在二维电子气(2DEG) [84][85][86] 、以及伴随出现的超导电性 [87][88] 等。与 SrTiO 3 不同的是 KTaO 3 具有更强的 SOC，导致其三重简并 t 2g 轨道发生进一步劈裂，产生更为复杂的电子结构(图 5(a))。King [84] 和 Santander-Syro [85] 等通过 ARPES 表征 KTaO 3 选。除了(001)晶向，Bruno 等 [86] 也在 KTaO 3 (111)中也观测到了相似电子结构特…”

Section: 钽酸钾unclassified

“…的自旋分量。这些特性是电荷-自旋互转换中产生特殊自旋取向的重要因素。此外，KTaO 3 与 LaTiO 3 [89] 、LaAlO 3 [90,91] 、EuO [92] 、LaVO 3 [93] 等材料的异质界面也具有 2DEG 态，并展现出一些新奇的特性，如界面载流子的高迁移率、自旋极化、自旋相关参数的高度可调性等。由于 KTaO 3 界面 2DEG 的强自旋轨道耦合特性和特性的电子能带结构，激起了人们对其电荷-自旋互转换性质的研究兴趣。Zhang 等 [94] 在 KTaO [83] ，已获得授权)； KTaO 3 (001)表面 2DEG 的 ARPES 结果，测量的能带结构示意图由红线表示(出自文献 [84] ，已获得授权)； (c) KTaO 3 (111)表面 2DEG 的 ARPES 结果，左侧为费米面的测量(上) 和计算(下)结果，星型-六角形费米面由 d xy 、d xz 、d yz 轨道构成；右侧为两个高对称方向的费米面测量结果侧视图(出自文献 [86] ，已获得授权)； (d) KTaO 3 /EuO 界面的热自旋注入与 inverse Edelstein 效应示意图(上)，及测量的逆 Edelstein 电流与 EuO 厚度的关联性(下) (出自文献 [94] ，已获得授权)；(e) 通过逆 Rashba-Edelstein 效应产生的电荷流与所施加 dc 磁场的关联性，插图为 SP-FMR 测量的配置图(出自文献 [95] ，已获得授权)；(f) 双线性磁电阻与电流(左)和磁场(右)的关系(出自文献 [95] ，已获得授权)。 Fig. 5 Electronic structures, spin transport properties and SOT associated characterization results of KTaO 3 (a) Schematic crystalline structure and band structure of KTaO 3 , the conducting t 2g band consists of complicated HE, LE and SO subbands due to SOC (Reproduced with permission from Ref.…”

Section: 钽酸钾unclassified

Research progress of novel quantum states and charge-spin interconversion in transition metal oxides

Lao¹,

Xuan²,

Sheng³

et al. 2023

Acta Phys. Sin.

View full text Add to dashboard Cite

For satisfying the efficient storage and processing of massive data in the information technology era, spintronic device attracts tremendous attention due to its low power consumption and non-volatile feature. Spin source material, which can efficiently generates spin current, is an important constituent of novel spin-orbit torque device. The efficiency of spin current generation in spin source materials directly determines the performance of various spintronic devices. In the nearly two decades, great progress has been achieved in exploring high-efficient spin source material systems, as well as understanding the relevant physical mechanisms. A wide variety of materials are explored ranging from the traditional heavy metal and semiconductors to topological insulators and 2D materials. Recently, the material family of transition metal oxides attracts tremendous attention due to its efficient and highly tunable charge-spin conversion intimately related to its emerging novel quantum states and electronic structure. The mechanism of charge-spin conversion generally have two contributions from the bulk spin Hall effect and the spin-momentum locked interface with inversion symmetry breaking. Novel electronic structure such as the topological band structure and spin-momentum locked surface states can realize efficient charge-spin conversion. For example, the Weyl points in SrRuO3 and the topological Dirac nodal line in SrIrO3 are predicted to give rise to large Berry curvature and the corresponding spin Hall conductance; the topological surface states can generate spin accumulation due to spin-momentum locking; the Rashba states at the oxide interface such as the 2D electron gas in SrTiO3 and KTaO3 can generate spin current by Rashba-Edelstein effect. Furthermore, the entanglement of various degrees of freedom, including spin, charge, lattice and orbit in transition metal oxides lead to the electronic structure highly tunable by various methods including gate voltage, substrate constraint, thickness, interface engineering etc. Therefore, the charge-spin conversion in transition metal oxides is of great interest for both fundamental research in modulation of novel electronic structure and exploring its promising potential in future spintronic devices. In this review, we focus on introducing the aspects of exotic electronic structures, spin transport mechanism, charge-spin interconversion characterization, efficiency and manipulation in TMOs, and giving a perspective about the future development trend.

show abstract

“…( 165) and (166) are hermitian, the matrix elements for the opposite hopping direction are given by the relation in Eq. (57). The above multipole basis are shown schematically in the columns of "bond" in Fig.…”

Section: A Two-orbital Hopping Modelmentioning

confidence: 99%

“…In addition to the above linear responses, the fascinating nonlinear responses such as the nonlinear optoelectronic transport in the parity-violating systems [51][52][53], nonlinear Nernst effect [54][55][56][57], and nonlinear magnetoelectric effect [58,59] have also been elucidated recently. For instance, the nonlinear Hall effect (NLHE) have been studied in several materials, such as ferroelectriclike metals [60], thin films of a Weyl semimetal [61][62][63][64][65][66][67], monolayer strained MoS 2 [68], an organic Dirac fermion system [69], elemental Te compounds [70][71][72], and so on.…”

Section: Introductionmentioning

confidence: 99%

Systematic analysis method for nonlinear response tensors

Oiwa,

Kusunose

2021

Preprint

View full text Add to dashboard Cite

Hexagonal warping induced nonlinear planar Nernst effect in nonmagnetic topological insulators

Cited by 10 publications

References 44 publications

Magnetic warping in topological insulators

Magnetic warping in topological insulators

Research progress of novel quantum states and charge-spin interconversion in transition metal oxides

Systematic analysis method for nonlinear response tensors

Contact Info

Product

Resources

About