Spin and valley dependent anomalous Nernst effect are analyzed for monolayer MoS2 and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g. two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient. For the dip state it is found that carriers with only one spin and from one valley are driven by the temperature gradient.

We theoretically analyze the non-linear anomalous Nernst effect as the second-order response of temperature gradient by using the semiclassical framework of electron dynamics. We find that a non-linear current can be generated transverse to the applied temperature gradient in time-reversalsymmetry materials with broken inversion symmetry. This effect has a quantum origin arising from the Berry curvature of states near the Fermi surface. We discuss the non-linear Nernst effect in transition metal dichalcogenides (TMDCs) under the application of uniaxial strain. In particular, we predict that under fixed chemical potential in TMDCs, the non-linear Nernst current exhibits a transition from T −2 temperature dependence in low temperature regime to a linear T -dependence in high temperature.

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The thermoelectric performance of a topological energy converter is analyzed. The H-shaped device is based on a combination of transverse topological effects involving the spin: the inverse spin Hall effect and the spin Nernst effect. The device can convert a temperature drop in one arm into an electric power output in the other arm. Analytical expressions for the output voltage, the figure of merit (ZT), and energyconverting efficiency are reported. We show that the output voltage and the ZT can be tuned by the geometry of the device and the physical properties of the material. Importantly, contrary to a conventional thermoelectric device, here a low electric conductivity may, in fact, enhance the ZT value, thereby opening a path to strategies in optimizing the figure of merit.