Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Liu, Chen; Xiao, Wenwu; Peng, Yue; Zeng, Binjian; Zheng, Shuaizhi; Yin, Lu; Peng, Qiangxiang; Zhong, Xiangli; Liao, Min; Zhou, Yue

doi:10.1109/ted.2021.3095036

Cited by 28 publications

(10 citation statements)

References 28 publications

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“…[19,33] Our previous studies indicate that the high-k seed layers could improve the interface properties by suppressing the interface traps generation, leading to the enhancement of MW and reliability. [34,35] In this work, we demonstrate that uniform ferroelectricity can be achieved for Hf 0.5 Zr 0.5 O 2 (HZO) thin films grown on (100), (110), and (111)-oriented Si substrates by using HfO 2 seed layers. The HZO thin films with HfO 2 seed layers exhibit better ferroelectric properties and faster switching speed than those without HfO 2 seed layers.…”

Section: Introductionmentioning

confidence: 84%

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Orientation Independent Growth of Uniform Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films on Silicon for High‐Density 3D Memory Applications

Liu

Yang

Zeng

et al. 2022

Adv Funct Materials

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The highly scalable ferroelectric hafnia‐based thin films can be easily integrated into ferroelectric field‐effect transistors (FeFETs) by existing Si technology, which are regarded as one of the promising candidates for fast read/write, energy‐efficient, and high‐density nonvolatile memories. However, device‐to‐device variation in threshold voltage (VTH) caused by non‐uniformity of ferroelectric properties is a serious challenge for implementing hafnia‐based FeFETs in high‐density nonvolatile memories. Here, the substrate‐orientation independent growth of Hf0.5Zr0.5O2 (HZO) thin films is realized with uniform ferroelectricity by using HfO2 seed layers. The HfO2 seed layers are beneficial to improving the ferroelectric polarization of HZO thin films grown on differently oriented Si substrates and reducing the variation in ferroelectric properties. Moreover, device simulation confirms that the proposed scheme contributes to realizing uniform memory properties in 3D vertical HZO‐based FeFETs. This study suggests the possibility to implement hafnia‐based FeFETs into 3D vertical high‐density memory.

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Section: Introductionmentioning

confidence: 84%

“…[ 19,33 ] Our previous studies indicate that the high‐k seed layers could improve the interface properties by suppressing the interface traps generation, leading to the enhancement of MW and reliability. [ 34,35 ]…”

Section: Introductionmentioning

confidence: 99%

Orientation Independent Growth of Uniform Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films on Silicon for High‐Density 3D Memory Applications

Liu

Yang

Zeng

et al. 2022

Adv Funct Materials

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“…conditions such as in space applications. Liu et al showed that using a HfO2 seed layer between FE-HfO2 and SiO2 interfacial layer improved device immunity against γ-ray radiation, hence improving endurance and retention [86]. However, further studies are required in order to identify technological solutions to guarantee radiation hardness.…”

Section: Ionizing Radiationmentioning

confidence: 99%

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

2023

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Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and lowpower operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, and variability. There is a broad consensus that a deep understanding of the reliability physics of HfO2-FeFETs is an essential prerequisite for the successful commercialization of this promising technology. In this paper, we review the current understanding of the relevant reliability aspects of HfO2-FeFETs. We initially focus on the reliability physics of ferroelectric capacitors, as a prelude to a comprehensive analysis of FeFET reliability. Then, we interpret key reliability metrics of the FeFET at device-level (i.e., retention, endurance, variability) based on the physical mechanisms previously identified. Our integrative theoretical framework connects apparently unrelated reliability issues and suggests mitigation strategies at either device, circuit, and system level. We conclude the paper by proposing a set of research opportunities to guide future development in this field.

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“…30 Liu et al reported that improvement of crystallinity and ferroelectricity of HZO thin films with a HfO 2 seed layer could enhance the memory characteristics and TID tolerance of HZO-based FeFETs. 31 Those works have proved that the P/E performances (memory states by P/E operations) of HfO 2 -based FeFETs could not be affected up to 1 Mrad(Si) radiation. However, none of the works paid attention to the impacts of TID on the stored information in both HZO-based and traditional ferroelectrics-based FeFET memory cells, that is, the evolution of memory states with TID irradiation.…”

Section: Introductionmentioning

confidence: 98%

“…Bae et al reported that the MW of the irradiated FinFET decreased due to the increased trap density near the ferroelectric/dielectric and SiO 2 /Si channel interfaces, and the degradations in that region became more severe with repeated P/E cycling . Liu et al reported that improvement of crystallinity and ferroelectricity of HZO thin films with a HfO 2 seed layer could enhance the memory characteristics and TID tolerance of HZO-based FeFETs . Those works have proved that the P/E performances (memory states by P/E operations) of HfO 2 -based FeFETs could not be affected up to 1 Mrad(Si) radiation.…”

Section: Introductionmentioning

confidence: 99%

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂-Based Ferroelectric Field-Effect Transistors

Dai

Yang

Zeng

et al. 2022

ACS Appl. Mater. Interfaces

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The ferroelectric field-effect transistors (FeFETs) with HfO 2 -based ferroelectric layers in the gate stacks are emerging as one of the most promising candidates for the next-generation nonvolatile memory devices due to their scalability and compatibility with conventional Si technology. Moreover, owing to the high radiation hardness of the HfO 2 -based ferroelectric thin films, HfO 2 -based FeFETs have attracted great interest in the fields of radiation-hard (rad-hard) memory. However, the reliability of their memory states under irradiation, which represents the validity of the stored information, has not been investigated. Here, we focus on the impact of the total ionizing dose (TID) on erased and programmed states of HfO 2 -based FeFETs. The TID radiation (Xray) characteristics of erased and programmed HfO 2 -based FeFETs are characterized using an on-site read operation. Both the erased and programmed states show robust stability under irradiation at a dose rate of 90 rad(Si)/s, and even at 230 rad(Si)/s, only the erased state shows a slight variation. The possible factors contributing to memory state degradation are discussed. Through the analysis of the threshold voltage shift and subthreshold swing evolution, as well as studies of ferroelectric polarization stability under radiation, it is revealed that the erased state degradation is caused by oxidetrapped charges rather than interface degradation or polarization switching. The physical mechanism of the difference in radiationinduced oxide-trapped charges buildup in programmed and erased FeFETs is analyzed to explain different TID radiation characteristics between them. Our work suggests that the HfO 2 -based FeFETs have great potential in radiation environment applications.

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Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Cited by 28 publications

References 28 publications

Orientation Independent Growth of Uniform Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films on Silicon for High‐Density 3D Memory Applications

Orientation Independent Growth of Uniform Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films on Silicon for High‐Density 3D Memory Applications

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂-Based Ferroelectric Field-Effect Transistors

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Hf0.5Zr0.5O₂-Based Ferroelectric Field-Effect Transistors With HfO₂ Seed Layers for Radiation-Hard Nonvolatile Memory Applications

Cited by 28 publications

References 28 publications

Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications

Orientation Independent Growth of Uniform Ferroelectric Hf0.5Zr0.5O2 Thin Films on Silicon for High‐Density 3D Memory Applications

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO2-Based Ferroelectric Field-Effect Transistors

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Product

Resources

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Orientation Independent Growth of Uniform Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films on Silicon for High‐Density 3D Memory Applications

Orientation Independent Growth of Uniform Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films on Silicon for High‐Density 3D Memory Applications

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in HfO₂-Based Ferroelectric Field-Effect Transistors