HfO₂-High-k Dielectric for Nanoelectronics

Abstract

Thermodynamic consideration of Hf-HfO 2 -SiO 2 -Si system, cross-sectional HR-TEM, XPS, IR-spectroscopy and Null ellipsometry technique were used to determine the chemical composition and structure of the HfO 2 thin films deposited on Si. The interface layer consists of the hafnium silicate with smoothly varying chemical composition along the film thickness. Formation of the IL occurs as during the HfO 2 film deposition so at annealing of the HfO 2 /SiO 2 /Si structure. Kinetics of the hafnium silicate formation was studied by IR-spectroscopy.